Thin Solid Films
 2017
DOI: 10.1016/j.tsf.2016.09.056
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Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm

I. Guizani
1
,
C. Bilel
2
,
M.M. Habchi
3
et al.
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