Effects of Pad Layout Variations on the Cut-off Frequency of Millimeter-Wave Transistors

Nouri, Soheil; Avval, Amirreza Ghadimi; El-Ghazaly, S.M.

doi:10.1109/wmcs52222.2021.9493270

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…To carry out the transmission line analysis, the per-unit-width parameters of the coupled multi-conductor lines are determined. Subsequently, the terminal conditions are applied according to the transistor pad layout [15]. The transmission line equations are then numerically solved by the EM solver that is shown in Fig.…”

Section: Wet Model Structurementioning

confidence: 99%

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Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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Section: Wet Model Structurementioning

confidence: 99%

“…5. The simulation has been conducted only for one finger and to account for the second finger appropriate boundary condition is implemented considering the symmetry of the configuration [15]. There are two observations in Fig.…”

Section: B Wave Propagation Analysismentioning

confidence: 99%

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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“…A comprehensive modeling approach that incorporates wave propagation effects has been proposed and validated in a wide frequency range, including linear and non-linear operations of fabricated GaN-HEMT devices [18]. In [19], the effect of two different electrode layouts on the performance of a millimeter-wave HEMT device is examined. In this work, extracted extrinsic parameters by accounting for the metallization edge effects and provided a closed-form equation to calculate the resistance by modifying Wheeler's incremental inductance rule.…”

Section: Introductionmentioning

confidence: 99%

Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors

Nouri,

El-Ghazaly

2023

IEEE Access

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This work presents a systematic parameter extraction methodology for modeling of millimeterwave transistors. The physics-based parameter extraction approach in this study is included in the waveelectron-transport model to improve the accuracy of the simulation results. The effects of extrinsic parameters on the performance of the device are also analyzed in detail. Skin effects and sharp metallization edge effects as the two physical phenomena that impact the current distribution and the resistance of millimeter-wave transistors are studied thoroughly. Two common electrode layout variations, the T configuration and the fork configuration, are compared. The comparison mainly targeted their performance on upper millimeter bands where physical phenomena like wave-propagation effects are dominant. The output power and the power gain of the transistor for a GaN-HEMT device are simulated and compared with measurements. Results illustrate the influence of parameters and electrode layout design on the accuracy of the modeling approach.INDEX TERMS Parameter extraction methodology, millimeter-wave transistors, electrode layout effects, edge effects, skin effects, physics-based modeling approaches.

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