Effects of Partial Substitution of W for Ti in Titanium Dioxide

Abstract

Ti 1-x W x O 2-y solid solutions with compositions of x = 0.01(TW-1), x = 0.02(TW-2), x = 0.03(TW-3) and x = 0.04(TW-4) were prepared at 1,073 K in air under atmospheric pressure. All the solutions exhibited tetragonal symmetries. Nonstoichiometric chemical formulas have been obtained from oxidation-reduction titration and the partial substitution of W 6+ ions mainly caused the formation of Ti 3+ ion, rather than oxygen excess. Resistivities of the samples were highly dependent on humidity. The increase of the W amount resulted in an increase of Ti 3+ content, decrease of resistivity values and finally degradation of photocatalytic activities.

Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma

“…Until now, many researchers have studied the properties of TaNO thin films [1][2][3][4][5]. Their application for thin film resistors is restricted because their resistivity changes suddenly when the nitrogen partial pressure is increased, and because TaNO thin films have a variety of crystal structures.…”