Effects of PbO-B2O3 Glass Doping on the Sintering Temperature and Piezoelectric Properties of 0.35Pb (Ni1/3Nb2/3)O3-0.65Pb(Zr0.41Ti0.59)O3 Ceramics

Abstract

0.35Pb(Ni 1/3 Nb 2/3 )O 3 -0.65Pb(Zr 0.41 Ti 0.59 )O 3 (PNN-PZT) ceramics doped with 0.5PbO-0.5B 2 O 3 glass have been synthesized by the conventional solid-state sintering technique. The effects of 0.5PbO-0.5B 2 O 3 glass on the sintering temperature and piezoelectric properties of PNN-PZT ceramics were studied. The results indicated that the sintering temperature of PNN-PZT was significantly reduced due to the incorporation of 0.5PbO-0.5B 2 O 3 glass dopant. When the content of 0.5PbO-0.5B 2 O 3 glass was 0.5 wt.%, the sintering temperature of PNN-PZT was observed to reduce from above 1200°C to 920°C while the samples maintained high density (7.91 g/cm 3 ), excellent piezoelectric constant (d 33 = 479 pC/N), large electromechanical coupling coefficient (K p = 0.55), and relatively low electromechanical quality factor (Q m = 79). Moreover, large dielectric constant (e 33 T /e 0 = 2904) and low dielectric loss (tan d = 0.0166) were obtained in this work.

Effects of B2O3doping on the dielectric and piezoelectric properties of (K,Na,Li)NbO3–BaZrO3–(Bi,Na)TiO3ceramics

“…The reason for this phenomenon was the formation of excessive liquid phase between grains, leading to an increase of leakage current, which directly led to the decrease of dielectric properties. 38) The T c of the ceramics with different B 2 O 3 contents are shown in Fig. 6.…”

Low‐temperature sintering Sm‐doped PMN–PZ–PT multilayer ceramic actuator with high strain and temperature stability

“…Among these strategies, the addition of sintering aids stands out as an effective way to reduce the sintering temperature, attributed to the formation of low‐melting point phases at grain boundaries, which accelerate the atomic migration and grain growth during the solid‐state reaction process 19 . For lead‐based piezoelectric ceramics, low temperature sintering has been achieved at temperatures below 1050°C by adding the low‐melting point sintering aid, such as Li 2 CO 3 , 20– 22 CuO, 23,24 LiBiO 2 , and 25– 27 PbO 21,28 Kim et al 29 . investigated the effect of CuO as a sintering aid on the sintering behavior of 0.69 Pb(Zr 0.47 Ti 0.53 )O 3 –0.31 Pb [(Zn 0.4 Ni 0.6 ) 1/3 Nb 2/3 ]O 3 (PZT–PZNN) ceramics, achieving a high piezoelectric coefficient d 33 = 502 pC/N at sintering temperature of 1025°C by adding 0.125 mol% CuO.…”

“…17,18 Among these strategies, the addition of sintering aids stands out as an effective way to reduce the sintering temperature, attributed to the formation of low-melting point phases at grain boundaries, which accelerate the atomic migration and grain growth during the solid-state reaction process. 19 For lead-based piezoelectric ceramics, low temperature sintering has been achieved at temperatures below 1050 • C by adding the low-melting point sintering aid, such as Li 2 CO 3 , [20][21][22] CuO, 23,24 LiBiO 2 , and [25][26][27] PbO 21, 28 Kim et al 29 C by adding 0.5 mol% CuO as a sintering aid. How-ever, the low Curie temperatures, being on the order of 130 • C, greatly limit their applications at elevated temperature.…”

Achieving High Piezoelectricity and Excellent Temperature Stability in Pb(Zr,Ti)O3-Based Ceramics via Low-Temperature Sintering

“…8 Sintering aids are conducive to forming lowmelting point glass phases that accelerate mass transportation, consequently contributing to the grain growth. Previously, researchers have developed several sintering aids to lower the T S for lead-based piezoceramics, such as V 2 O 5 , 9 CuO, 10 Li 2 CO 3 , 11 PbO-B 2 O 3 , 12 ZnO-Li 2 O, 13 etc. Despite the reduced T S , inferior piezoelectricity (e.g., d 33 < 700 pC/N and k p < 70%) and relatively poor temperature stability are still bottlenecks for practical piezoelectric transducer applications.…”