Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Požela, K.; Šilėnas, A.; Požela, J.; Jucienė, V.; Галиев, Г. Б.; Vasil’evskii, J. S.; Климов, Е. А.

doi:10.1007/s00339-012-7039-7

Cited by 12 publications

(4 citation statements)

References 11 publications

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“…2. Movement of the quasi-Fermi levels in the non-equilibrium state up or down leads to a significant change of transverse magnetoresistance oscillations along the vertical axis of small-scale p-type semiconductor structures under the influence of darkness and light (12) was proved based on the Equation. The displacements of these oscillations are given in experiments, but their theoretical physical meaning was justified using the equation (15).…”

Section: Discussionmentioning

confidence: 99%

“…The obtained equation (12), that is, , , d B T d h μ ν , means that the quasi-Fermi level of semiconductors with a quantum layer heterostructure depends on the magnetic field, temperature, thickness of the quantum layer, and light energy.…”

Section: Eejp 1 (2024)mentioning

confidence: 99%

“…Among them are thin films, nanotubes and two-dimensional (2D) structures [1][2][3][4][5][6][7][8][9][10]. In particular, quantum oscillation effects under the influence of a magnetic field and electromagnetic waves (light) have been observed in several new classes of narrow band quantum well heterostructures, for example, oscillations of transverse and longitudinal magnetoresistance, Shubnikov-de Haas oscillations and quantum Hall effects [11][12][13][14][15][16][17][18][19][20]. In works [21][22][23], the effect of temperature dependence of magnetoresistance oscillations, magnetic susceptibility oscillations, and quantum Hall effects in bulk and nano-scale semiconductor structures on external factors was investigated.…”

Section: Introductionmentioning

confidence: 99%

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Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Erkaboev,

Rakhimov,

Mirzaev

et al. 2024

East Eur. J. Phys.

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In this work, the influence of light on the temperature dependence of transverse magnetoresistance oscillations is studied. A generalized mathematical expression that calculates the temperature and light dependence of the quasi-Fermi levels of small-scale p-type semiconductor structures in a quantizing magnetic field is derived. New analytical expressions have been found to represent the temperature dependence of transverse differential magnetoresistance oscillations in dark and light situations, taking into account the effect of light on the oscillations of the Fermi energy of small-scale semiconductor structures. A mathematical model has been developed that determines the light dependence of the second-order derivative of the transverse magnetoresistance oscillations of p‑type semiconductors with quantum wells by magnetic field induction. A new theory is proposed, which explains the reasons for the significant shift of the differential magnetoresistance oscillations along the vertical axis measured in the experiment for dark and light conditions.

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Section: Discussionmentioning

confidence: 99%

Section: Eejp 1 (2024)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Erkaboev,

Rakhimov,

Mirzaev

et al. 2024

East Eur. J. Phys.

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“…In particular, the insertion of nanoscale InAs layers into the InAlAs/InGaAs/InAlAs QW allows the mobility and maximum drift velocity of electrons to be increased [3,4], and also effective mass of electrons to be reduced [5,6]. Another way of improving the char acteristics of electron transport lies in the reduction of electron-phonon scattering in a QW due to phonon spectrum variation with the use of GaAs, AlAs, and InAs layers [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well

et al. 2015

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The photoluminescence spectra of modulation doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uni form In 0.53 Ga 0.47 As quantum well. Simulation of the band structure shows that this change is caused by a vari ation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light and heavy hole subbands in the quantum well. A technique for separately controlling the light and heavy hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

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Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Požela

Šilėnas

et al. 2012

Appl. Phys. A

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Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Cited by 12 publications

References 11 publications

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

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