Effects of Phosphorus Dopant on the Thermal Stability of Thin Pd₂Si and PtSi Silicide Films on (100) Si Substrates

Abstract

The effects of phosphorus dopant on the thermal stability of thin Pd and Pt silicide films on (100) Si substrates have been studied. For the samples formed by implanting phosphorus dopant into thin Pd films followed by annealing, both the thermal stability and the silicide conductivity of thin Pd2Si films are significantly enhanced relative to the control samples without dopant incorporation. Large improvements in the thermal stability and the silicide conductivity are dependent on the formation of a textured Pd2Si structure. In addition, the Pt silicides formed by implanting phosphorus dopant into thin Pt films followed by annealing also show considerably improved thermal stability.

A study on selective etching for elevated PtSi salicide process and work function modulation of PtSi alloying with Hf

“…However, it undergoes a phase transition to become NiSi 2 as a result of thermal processing at higher temperatures, and its resistivity eventually rises. On the other hand, PtSi has the advantage of better thermal budget immunity than NiSi, and lower Si consumption, but its barrier height for electrons is high [9,10].…”