Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

Abstract

Phosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 -580 oC temperature range results in the formation of one GaP monolayer. INTRODUCTION:

Photoreflectance study of phosphorus passivation of GaAs (001)

“…[17][18][19][20] In this work, superlattices of TBP exposed GaAs surfaces were investigated to study the P exchange reaction and to evaluate the P coverage. The growth sequence is shown in Fig.…”

Structural and optical properties of strain balanced InP/GaAs/GaP/GaAs superlattices

“…This observation is in line we turn to asymmetric (511) 8-20 HRXRD reflection figure.3. The TEM data shown, also correlate well With previous results (7,8,9,12) where we observed the formation of one GaP layer upon csposure of a GaAs surface to a phosphorus flu. In general the GaAs/lnP interfaces are less abrupt than those between GaP and GaAs, that is again explaincd by more favorable …”

Study of As/sub 4/ beam induced P-As exchange reaction on InP surface by photoluminescence and X-ray diffraction

“…Assignment of PL peaks at 300 K in Fig.3 (b) was done in the same way with the assumption of that the 1.28 eV peak corresponds to 1 ML QW. As seen from Fig.3, the PL energy positions agree well with those for elhh l transitions predicted from the calculations at both 18 K and 300 K. Such assignments seem to be also consistent with the previous reports (1 [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. From these results, the As composition of the present QWs should be about 90 -95%.…”

“…Although several reports (1)(2)(3)(4)(5) have mentioned the presence of this exchange reaction, a detailed investigation has not been made so far. This paper presents for the first time the result of a detailed investigation on the P -As exchange reaction which takes place on the InP surface when it is exposed to As4 beam.…”