Photomask Technology 2008 2008
DOI: 10.1117/12.802741
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Effects of photo resist erosion in development on critical dimension performance for 45nm node and below

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“…An accurate simulation should also take into account smoothing of the resist profiles due to redistribution (diffusion) of activated chemical bonds during the post bake and photoresist development. This effect was accounted for via Gaussian blur with the standard deviation σ [26,27].…”
Section: Modelingmentioning
confidence: 99%
“…An accurate simulation should also take into account smoothing of the resist profiles due to redistribution (diffusion) of activated chemical bonds during the post bake and photoresist development. This effect was accounted for via Gaussian blur with the standard deviation σ [26,27].…”
Section: Modelingmentioning
confidence: 99%