Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Abstract

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10−9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

“…This result is consistent with the fact that the grain boundaries (as shown in Fig. 4) which are leakage channels [24], increase with the annealing temperature except for the sample annealed at 650°C which does not show a grain structure. In the light of the whole results, it seems that the pH sensitivity is closely related to the level of insulation and/or surface morphology of the dielectric material.…”

“…For all the MIS capacitors, the current density is lower in the positive voltage range. This can be attributed to the formation of a depletion region when the positive voltage is added [24]. The current density increases with the increase of the annealing temperature except for the film annealed at 650°C.…”

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

“…[1][2][3][4] Inserting a dielectric layer in such as MOS structures has been found to result in low leakage currents and high breakdown strengths. Numerous gate dielectrics, including SiN, 2,5) SiO 2 , 3,[6][7][8][9][10] Al 2 O 3 , 4,[11][12][13][14][15][16][17][18] AlON, 19) ZrO 2 , 20,21) HfO 2 , 20,22) Si x N x -SiO 2 , 1) SiO 2 -HfO 2 , 8) Al 2 O 3 -HfO 2 , 23) and Al 2 O 3 -TiO 2 bilayers, 24) (Al, Si)O, 25) and Al 2 O 3 /SiO 2 laminate 26) (forming AlSiO x ) have been studied for use in MOS units, and films of these materials are typically deposited via chemical vapor deposition or atomic layer deposition (ALD). ALD is the optimal approach to fabricating conformal films on three-dimensional structures, which is required when producing vertical GaN devices.…”

Influence of Annealing Atmosphere on Varistor Property of TiO<sub>2</sub>-Nb<sub>2</sub>O<sub>5</sub>-SrCO<sub>3</sub> Ceramics

“…M.J. Zheng et al studied the effect of annealing on GaN-based semicon-ductor capacitors with ZrO 2 as dielectric layer prepared by atomic deposition method. The results showed that the capacitance gradually increased with the increase of annealing temperature from 300˚C to 500˚C [22]. A. Hosokawa et al…”