Effects of post-implantation annealing on LWIR HgCdTe diode characteristics

Bae, Soo Ho; Kim, Young‐Ho; Lee, Hee Chul; Kim, Choong‐Ki

doi:10.1117/12.328005

Cited by 1 publication

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“…Âàaeëèâèì ôàêòîðîì äëÿ ôîðìóâàííÿ ÿê³ñíèõ p-n-ïåðå-õîä³â º ðàä³àö³éí³ äåôåêòè, à òàêîae ìåõàí³÷í³ íàïðóaeåííÿ, ÿê³ âèíèêàþòü â ³ìïëàíòîâàíîìó øàð³. Âëàñòèâîñò³ ³ ìåõàí³çìè ôîðìóâàííÿ p-n-ïåðåõîä³â â CdHgTe âèâ÷àëèñÿ â ðÿä³ ðîá³ò [6,[9][10][11]. Òàê ÿê ³îííà ³ìïëàíòàö³ÿ ïðîâîäèòüñÿ â åï³-òàêñ³éíèé øàð CdHgTe, òî îñíîâíèé ìåõàí³çì ôîðìóâàííÿ ëåãîâàíî¿ îáëàñò³ ïîëÿãàº â òîìó, ùî ³îíè âèáèâàþòü àòîìè ðòóò³ ³ âñ³ ïåðåõîäÿòü ó ì³aeâóçëîâ³ àòîìè.…”

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FORMING OF A 128X128 MULTIELEMENT IR-PHOTODETECTORS BASED ON CdHgTe

Sizov¹,

Tsybrii²,

Vuichyk³

et al. 2009

SEMST

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Àíîòàö³ÿ. Ïðèâåäåíî ðåçóëüòàòè ðîá³ò ïî ñòâîðåííþ áàãàòîåëåìåíòíèõ ôîòîïðèéìàëüíèõ ïðèñòðî¿â ³íôðà÷åðâîíîãî ä³àïàçîíó íà îñíîâ³ CdHgTe. Çàïðîïîíîâàíî ðÿä îðèã³íàëüíèõ òåõíîëîã³÷íèõ ð³øåíü, ç óðàõóâàííÿì ìåõàí³÷íèõ òà åëåêòðîô³çè÷íèõ îñîáëèâîñòåé òîíêîïë³âêîâîãî CdHgTe, çîêðåìà: ïàñèâàö³ÿ ïîâåðõí³ åï³òàêñ³éíèõ ïë³âîê CdHgTe, ìî-äèô³êàö³ÿ ðåaeèì³â ôîòîë³òîãðàô³÷íèõ ïðîöåñ³â, áàãàòîøàðîâà ìåòàë³çàö³ÿ òà ïðåöèç³éíà ã³áðèäèçàö³ÿ. Çà äîïîìîãîþ ðîçðîáëåíî¿ òåõíîëîã³¿ áóëî ñôîðìîâàíî ìàòðèö³ ôîòîïðèéìà-÷³â ôîðìàòó 128õ128 åëåìåíò³â.

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