Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Lin, Yu-Shyan; Lu, Chi-Che

doi:10.1116/1.4973877

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…To investigate current linearity behavior, we tried to plot the full width at half maxima (FWHM) of g m -V G profiles as a function of the equivalent oxide thickness (EOT) including insulator and AlGaN barrier layers. Figure 9 shows comparison of FWHM of g m for AlGaN=GaN MIS-HMETs using SiO 2 , [51][52][53] Al 2 O 3 , 44,[54][55][56][57] SiN, 25,26,58,59) HfO 2 , 60,61) AlN, 62) Ga 2 O 3 , 63) and TiO 2 64) dielectric materials. Our data are also included in Fig.…”

Section: Parameter Name Symbol (Unit)mentioning

confidence: 99%

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Nishiguchi

Kaneki

Ozaki

et al. 2017

Jpn. J. Appl. Phys.

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To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 degrees C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I-D-V-G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMTshowed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures

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Section: Parameter Name Symbol (Unit)mentioning

confidence: 99%

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Nishiguchi

Kaneki

Ozaki

et al. 2017

Jpn. J. Appl. Phys.

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“…Based on a study regarding a 95 nm-thick TiO 2 IL grown via pulsed laser deposition, Lee et al suggested that the reverse current and rectification behavior in Au/GaN Schottky junctions were affected significantly by the oxygen deposition pressure during TiO 2 growth [31]. TiO 2 has been shown to effectively passivate GaN and AlGaN [32]. An IL that is extremely thick can reduce the leakage current but increases the series resistance.…”

Section: Introductionmentioning

confidence: 99%

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

Kim¹,

Jung²,

Choi³

2022

Phys. Scr.

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In this study, ZnO (10 nm) and TiO2 (2 nm) were grown on a GaN substrate via atomic layer deposition, and the modified properties of Pt/GaN Schottky diodes with ZnO and ZnO/TiO2 interlayers (ILs) were electrically investigated. The barrier height increased with the ZnO and ZnO/TiO2 ILs; however, the ideality increased with the ZnO/TiO2 IL. The reverse-current–voltage characteristics were associated with the Poole–Frenkel emission for all the three junctions. Compared with the Pt/GaN junction, the density of the surface states decreased for the Pt/ZnO/GaN junction but increased for the Pt/ZnO/TiO2/GaN junction. An increase in the ideality factor and a decrease in the barrier height with decreasing temperature were observed at the Pt/GaN and Pt/ZnO/TiO2/GaN junctions. In general, the diode characteristics of the Pt/GaN junction improved owing to the ZnO IL, whereas it degraded owing to the ZnO/TiO2 IL. However, both ZnO and ZnO/TiO2 ILs demonstrate worse diode characteristics at higher temperatures. A thicker ZnO layer (> 10 nm) is suggested for improved thermal stability.

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High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

Upadhyay

Surapaneni

Yadav

et al. 2022

Physica Status Solidi (a)

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Herein, Ta2O5 high‐k gate dielectric‐based GaN high electron‐mobility transistors (HEMTs) with a high I ON/I OFF ratio and low gate leakage current are demonstrated without any significant deterioration of the other performance parameters. Ta2O5 with an average surface roughness of 1.8 nm and a dielectric constant of ≈26 are grown by sputtering and annealing in O2. The bandgap, valence, and conduction band offsets with Al0.3Ga0.7 N are 4.85, 0.24, and 0.61 eV, respectively. The reverse gate leakage current at −7 V is observed to be 1.2 ×10−10 A mm−1 for 5 nm and <1.0×10−11 A mm−1 for 20 and 30 nm oxide thickness compared to 5.0 × 10−6 A mm−1 for the control sample. This current is among the lowest ever reported for GaN‐based oxide‐HEMTs without significantly sacrificing other performances. The I ON/I OFF ratio is 2 × 109, 7 × 109, and 1 × 10 for 5, 20, and 30 nm oxide thickness, respectively, as compared to 2 × 108 for the control sample. The interface–state–density is estimated to be 1.5 × 1013 cm−2 eV−1. I DS,sat is measured to be 710, 700, and 690 mA mm−1 for 5, 20, and 30 nm Ta2O5 thickness, respectively, compared to 725 mA mm−1 for the control sample. The presence of oxide does not change the other characteristics much.

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Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Cited by 4 publications

References 14 publications

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric

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Effects of postdeposition annealing on TiO2/GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Cited by 4 publications

References 14 publications

Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

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Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Current linearity and operation stability in Al₂O₃-gate AlGaN/GaN MOS high electron mobility transistors

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO₂/ZnO interlayers

High‐Performance GaN HEMTs with I_ON/I_OFF ≈10¹⁰ and Gate Leakage Current <10⁻¹¹ A mm⁻¹ Using Ta₂O₅ Dielectric