“…Furthermore, the recent work of Vande Put et al [68] has shown no significant differences in microstructure between Hf-free beNiPtAl diffusion aluminides and Hf-doped coatings containing w0.2 at.% Hf. It has also been reported that reactive elements could inhibit coating/substrate interdiffusion if they formed discrete barriers to diffusion in the form of stable reactive element-containing phases along the coating/substrate interface [55,56,60]. This has been demonstrated to some extent by the work of Haynes et al [56] who showed that the formation of a Ni 3 Hf-type layer could limit Al depletion during oxidation testing at 1150 C. Given that grain boundaries, like dislocation lines and external surfaces, act as short-circuit pathways for diffusion, it is feasible that elemental diffusion from a coating layer could also be inhibited by the formation of stable precipitates along grain boundaries.…”