Effects of processing conditions on the growth of nanocrystalline diamond thin films: real time spectroscopic ellipsometry studies

Hong, Byungyou; Lee, Joungchel; Collins, R. W.; Kuang, Yalei; Drawl, W.; Messier, R.; Tsong, Tien T.; Strausser, Y. E.

doi:10.1016/s0925-9635(96)00591-2

Cited by 56 publications

(59 citation statements)

References 46 publications

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“…The ratio of sp2 to sp3 is there simply given in terms of the mixing parameter introduced by the EMA analysis, as a good approach in the case of pure high temperature hard DLC materials. A similar analysis at 785°C was reported [12]. with EMA mixing of Glassy C and sp2 C in diamond.…”

Section: Films Characterizations: Spectroscopic Ellipsometrysupporting

confidence: 80%

Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

Ferrieu¹,

Chaton²,

Neira³

et al. 2007

AIP Conference Proceedings

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Section: Films Characterizations: Spectroscopic Ellipsometrysupporting

confidence: 80%

Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

Ferrieu¹,

Chaton²,

Neira³

et al. 2007

AIP Conference Proceedings

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“…At higher radiation density (4.8 MW/cm 2 ) the contribution of this DLC film was approximated by three Lorentzian lines and the spectra of effective ε(E) (Fig. 5) were interpreted as broadened ε(E) for a-C:H. At the highest laser intensity (7.1 MW/cm 2 ) the effective dielectric function was modelled by glassy carbon [18] with increased density. It should be noted that glass-like materials are usually formed [19] at the laser irradiation with pulses of 10 −7 s duration and 10 MW/cm 2 intensity.…”

Section: Spectroscopic Ellipsometrymentioning

confidence: 99%

Modification of amorphous a-C:H films by laser irradiation

Grigonis¹

2007

Lithuanian J. Phys.

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Amorphous diamond-like hydrogenated carbon films a-C:H were formed on Si wafers by a direct ion beam deposition method from acetylene or a gas mixture of acetylene and hydrogen. The samples were irradiated in a scanning mode by second harmonic (wavelength λ = 532 nm) of a Q-switched YAG : Nd laser. The effect of laser irradiation was studied by Raman and infrared spectroscopy and spectroscopic ellipsometry. The changes in the optical spectra of the samples with different H amount were investigated in the dependence on laser intensity. Experimental data were interpreted taking into account the structural transformations of a-C:H films.

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“…Linear regression analysis ͑LRA͒ methods employing the Marquardt-Levenberg 25,26 and conventional Bruggeman EMA have been used to simulate the ex situ SE data in different fitting procedures to determine the best fit using WVASE 32 software. In the analyses, the bulk optical function of the material components of the film microstructure, including c-Si, diamond component ͑sp 3 C͒, and nondiamond component ͑sp 2 C͒ as glassy carbon or graphite, was taken following Collins 27 and J. A. Woollams' materials database library.…”

Section: Methodsmentioning

confidence: 99%

Ex situ variable angle spectroscopic ellipsometry studies on chemical vapor deposited boron-doped diamond films: Layered structure and modeling aspects

Gupta

Dudipala

Williams

et al. 2008

Journal of Applied Physics

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Field emission from single-, double-, and multi-walled carbon nanotubes chemically attached to silicon J. Appl. Phys. 111, 044326 (2012) Ceasing of voltage switching amongst graphitic shells in multiwalled carbon nanotubes: A route toward stability Appl. Phys. Lett. 100, 043505 (2012) Directly grown large area single-walled carbon nanotube films with very high sensitivity to normal pressure J. Appl. Phys. 111, 023502 (2012) Magnetoresistance of nanocarbon materials based on carbon nanotubes Low Temp. Phys. 37, 819 (2011) Characterization of the electrical contact between a conductive atomic force microscope cantilever and a carbon nanotube J. Appl. Phys. 110, 054305 (2011) Additional information on J. Appl. Phys. We report the optical property measurements on boron-doped diamond ͑BDD͒ films which were synthesized by microwave plasma-assisted chemical vapor deposition technique on Si ͑100͒ using methane in high hydrogen dilution and trimethylboron as precursors with varying boron concentration such that ͓B͔ / ͓C͔ gas = 100, 500, 1000, 2000, 4000, and 6467 ppm. These BDD films were investigated using a rotating analyzer variable angle spectroscopic ellipsometry ͑SE͒ from the near IR to UV range ͑830-193 nm͒. By applying the conventional Bruggeman effective medium approximation and linear regression analyses to the raw SE data that is, ͓ ͑ i ͒ , ⌬͑ i ͔͒ and pseudodielectric function ͑͗ r ͑ i ͒͘ , ͗ i ͑ i ͒͒͘, we determined the most appropriate model fit. The SE modeling was performed through the normal and point-by-point fit methods combined with the coupled and uncoupled bulk and surface layer approaches providing the details about the thin films' microstructure in terms of the ͑a͒ multilayer ͑component and surface͒ structure and component layer thickness of the films, ͑b͒volume fraction of constituents ͓f sp 3 C , f sp 2 C and void ͑f v ͒ in the component layer͔, ͑c͒ inhomogeneity of the structure along the growth axis and its variation with boron concentration, and ͑iv͒ surface roughness layer thickness ͑d s ͒ with dimensions less than the optical wavelength that is not otherwise available. A simplified three-layer structural model consisting of an interfacial layer, an intermediate ͑or bulk͒ layer, and a top surface roughness layer has been proposed, which simulates the ellipsometry data reasonably well with coupled point-by-point method. An estimator, i.e., mean squared error ͑ 2 ͒, is used to assess the accuracy of the model fit. The results ͑surface roughness and constituents' fraction͒ obtained through SE modeling are also compared with those from atomic force microscopy ͑AFM͒ and Raman spectroscopy to validate the layered model employed. Typically, high surface roughness values around 6 nm were found for films grown under different boron concentrations which is almost five times smaller than determined from AFM. In this context, we determined an approximate linear relationship between these two variables. The relatively smaller surface roughness for BDD films indicates the combined role of b...

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Effects of processing conditions on the growth of nanocrystalline diamond thin films: real time spectroscopic ellipsometry studies

Cited by 56 publications

References 46 publications

Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films

Modification of amorphous a-C:H films by laser irradiation

Ex situ variable angle spectroscopic ellipsometry studies on chemical vapor deposited boron-doped diamond films: Layered structure and modeling aspects

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