Solid-State Electronics
 1995
DOI: 10.1016/0038-1101(94)00160-h
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Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

Huajun Tian
1
,
John R. Hauser
2
,
N.A. Masnari
3
et al.
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Cited by 8 publications
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