Effects of proton irradiation on AlGaN/InGaN/GaNgreen lightemitting diodes

Osiński, Marek; Perlin, P.; Schöne, Harald; Paxton, Alan H.; Taylor, Edward W.

doi:10.1049/el:19970816

Cited by 42 publications

(14 citation statements)

References 3 publications

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“…[158][159][160][161][162][163][164][165][166][167][168][169][170][171] Recently, the application of GaN-based LEDs has been extended to satellite communication systems for weather forecasting or broadband data transmission due to their high radiation hardness. The materials used in GaN-based LEDs have small lattice constants (a = 3.189 Å, c = 5.186 Å for wurtzite GaN structure) due to their strong bond energies and therefore show superior resistance to damage under radiation environments due to the higher displacement energies compared with other semiconductor systems such as the GaAs used in red LEDs (a = 5.653 Å).…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…176 This is important in radiation testing of LEDs, where high-energy protons are often used because they can penetrate package materials with only slight energy corrections. 176 Osiński et al 166 first reported the superior radiation hardness of group-III nitride based LEDs compared with that of GaAs-based LEDs. In their work, the output power of AlGaN/InGaN/GaN green LEDs after 2 MeV proton irradiation at a dose of 1.68 × 10 12 /cm 2 was found to decrease by 40%.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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show abstract

“…High radiation resistance is required for applications in satellite and space technology because of the presence of large fluxes of high energy electrons, protons, and heavy ions. The initial work on effect of proton irradiation on GaN-based heterostructures involved light-emitting diodes, 1 while subsequent work has focused on AlGaN/GaN HEMTs. [2][3][4][5][6][7][8][9][10] For a proton fluence of 10 14 /cm 2 at 1.8 MeV energy, reductions of saturation drain current (I DSS ) and transconductance (g m ) in HEMTs from 260 to 100 mA/mm and from 80 to 26 mS/mm, respectively, were reported.…”

Section: Introductionmentioning

confidence: 99%

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 5 × 1015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5 MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121–336 cm−1 over the range of proton energies employed in this study.

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“…Even higher proton doses were found necessary for changing the characteristics of proton-irradiated blue GaN/InGaN LEDs [100]. For green GaN/ InGaN LEDs [101] it was reported that 2 MeV protons produce about 40% light output decrease after a fl uence of 1.7×10 12 cm -2 .…”

Section: Radiation Effects In Gan-based Devicesmentioning

confidence: 99%

Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Effects of proton irradiation on AlGaN/InGaN/GaNgreen lightemitting diodes

Cited by 42 publications

References 3 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Radiation Damage in GaN‐Based Materials and Devices

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