2019
DOI: 10.1016/j.snb.2019.127041
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Effects of Pt loading onto SnO2 electrodes on CO-sensing properties and mechanism of potentiometric gas sensors utilizing an anion-conducting polymer electrolyte

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Cited by 35 publications
(15 citation statements)
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“…Tin oxide (SnO 2 ) is a typical n-type semiconductor oxide with wide band gap (E g =~3.6 eV). It has been extensively used in many modern chemical gas sensors [5][6][7][8][9]. Reduction of the particle size and thickness of the SnO 2 -based sensing electrodes (SE) down to nm scale is one of the recently established trends in improvement of the sensors' characteristics [9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Tin oxide (SnO 2 ) is a typical n-type semiconductor oxide with wide band gap (E g =~3.6 eV). It has been extensively used in many modern chemical gas sensors [5][6][7][8][9]. Reduction of the particle size and thickness of the SnO 2 -based sensing electrodes (SE) down to nm scale is one of the recently established trends in improvement of the sensors' characteristics [9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…It has been extensively used in many modern chemical gas sensors [5][6][7][8][9]. Reduction of the particle size and thickness of the SnO 2 -based sensing electrodes (SE) down to nm scale is one of the recently established trends in improvement of the sensors' characteristics [9][10][11][12][13]. In addition to SnO 2 , indium oxide (In 2 O 3 ) is well-known n-type wide band gap semiconductor too (E g =~3.0 eV).…”
Section: Introductionmentioning
confidence: 99%
“… Compared with the pristine ZnO, these two peaks of ZnO/PtO/Pt have a positive shift of 0.35 eV, and the two peaks are located at 1044.46 and 1021.36 eV, respectively. The difference in the binding energies of Zn suggests an electronic interaction between ZnO and PtO due to their different work functions . In the high-resolution XPS spectrum of Pt 4f (Figure c), the binding energies at 73.77 eV for Pt 4f 5/2 and 70.47 eV for Pt 4f 7/2 can be assigned to minor metallic Pt(0) .…”
Section: Resultsmentioning
confidence: 99%
“…The difference in the binding energies of Zn suggests an electronic interaction between ZnO and PtO due to their different work functions. 36 In the high-resolution XPS spectrum of Pt 4f (Figure 2c), the binding energies at 73.77 eV for Pt 4f 5/2 and 70.47 eV for Pt 4f 7/2 can be assigned to minor metallic Pt(0). 37 Moreover, the binding energies at 75.47 eV for Pt 4f 5/2 and 72.07 eV for Pt 4f 7/2 can be assigned to Pt(II) from PtO.…”
Section: Methodsmentioning
confidence: 98%
“…It is crucial to study the effect of humidity of any designed sensor material as the higher level of humidity may significantly influence the sensing response of the materials. [68,69] Therefore CO sensing response of 5 wt% TaSn material (at 50 °C) under different humidity levels was studied. Figure 10 shows change in the response % of 5 wt% TaSn sample over different level of relative humidity.…”
Section: Effect Of Relative Humiditymentioning
confidence: 99%