2014
DOI: 10.1007/s11664-014-3254-7
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Effects of Rapid Thermal Annealing on Electrical Transport in Heavily Doped ZnO Thin Films Deposited at Different Substrate Temperatures

Abstract: In this work, heavily doped ZnO thin films with carrier concentrations of 1.7 9 10 20 -1.1 9 10 21 cm À3 were prepared on glass substrates using direct current magnetron sputtering combined with rapid thermal annealing (RTA). The effects of RTA on the electrical transport properties of the thin films were investigated. Results showed that the resistivities of the thin films deposited at low temperatures were markedly improved due to the increased mobilities and/or carrier concentrations. Temperature-dependent … Show more

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