Effects of Rapid Thermal Annealing on Deep Levels in<i>n</i>-GaInP

Tukiainen, Antti; Dekker, J.; Xiang, N.; Pessa, M.

doi:10.1088/0031-8949/2004/t114/001

Phys. Scr.

2004

DOI: 10.1088/0031-8949/2004/t114/001

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Effects of Rapid Thermal Annealing on Deep Levels inn-GaInP

Antti Tukiainen

J. Dekker

N. Xiang

et al.

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Cited by 5 publications

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“…In general, the concentration of traps increases with nitrogen content or any impurity associated with it due to more defects created that behave as deep level centers [46]. It was also demonstrated that the concentration of defects decreases with annealing temperature due to the decrease of these traps in GaAsPN quaternary alloys [23,47].…”

mentioning

confidence: 97%

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih¹,

Albalawi²,

Henini³

2019

Semicond. Sci. Technol.

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The effect of rapid thermal annealing on the electrical properties of p ++ GaP/p -GaAsPN/n + GaP diodes were investigated by using Current -Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) techniques in the temperature range from 100K to 440K. It was observed that rapid thermal annealing treatment improves the electrical characteristics of as-grown structures. The annealed samples showed an ideality factor lower than the as-grown samples for all temperatures. The ideality factor values from I-V characteristics has changed between 6.8 and 1.9 in the temperature range of 110-430K for as grown diode, and between 6.3 and 1.44 in the temperature range 100-400K for the annealed diode. On the other hand, the barrier height increases and the ideality factor decreases with increasing temperature for all samples. The barrier height values has changed between 0.29 eV and 0.71eV in the temperature range of 190-430K for as grown diode, and between 0.38 eV and 0.77eV in the temperature range 180-420K for the annealed diode. High values of barrier heights were observed in the annealed samples due to the barrier height in-homogeneities at the p-i-n junction.The net acceptor concentration was calculated to be 1.18 x10 18 cm -3 and 2.11x10 18 cm -3 for the as-grown and annealed GaAsPN layers, respectively. The net acceptor concentration increases by ~56% and the leakage current of the GaAsPN/GaP p-i-n junction decreases by1-2 orders after RTA. DLTS and Laplace-DLTS measurements reveal three hole traps, H1an(0.06eV), H2an(0.065eV) and H3(0.23eV) in the annealed samples as compared with two hole traps, H4ag(0.07eV) and H5(0.25eV) in the as-grown samples. After rapid thermal annealing an extra shallow trap is created.

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mentioning

confidence: 97%

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih¹,

Albalawi²,

Henini³

2019

Semicond. Sci. Technol.

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2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

Sun

Fan

Faucher

et al. 2021

Solar Energy Materials and Solar Cells

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Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping

Sun

Hool

et al. 2022

Solar Energy Materials and Solar Cells

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Effects of Rapid Thermal Annealing on Deep Levels inn-GaInP

Cited by 5 publications

References 16 publications

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping

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