Effects of rapid thermal annealing on the properties of GaNxAs1−x

Liu, Z. L.; Chen, P. P.; Wang, C.; Li, T. X.; Cui, H.Y.; Li, Y. J.; Chen, X. S.; Lü, Wei

doi:10.1063/1.2736282

Cited by 9 publications

(4 citation statements)

References 27 publications

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“…As mentioned above, the A (heavy hole band) peak represents the band gap energy, E g , while the other two peaks, B (light hole band) and C (split-off band), correspond to the energy differences between the top of the splitted valence bands and the bottom of the conduction band. In the literature, there are many studies on the determination of the valence band splitting of ternary semiconductors by means of photocurrent spectroscopy, reflectance measurements and photothermal deflection spectroscopy [20][21][22][23][24][25][26][27]. The valance band splitting is observed because of the compression in the film structure due to the tetragonal symmetry of the shortrange order crsytalline field and the spin-orbit interaction [11,12,17,25].…”

Section: Temperature Dependent Spectral Photoresponsementioning

confidence: 99%

Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films

Çolakoğlu¹,

Parlak

Kulakçı

et al. 2008

J. Phys. D: Appl. Phys.

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In this study, e-beam evaporated Ag–In–Se (AIS) thin films were doped by the implantation of boron (B) ions at 75 keV with a dose of 1 × 1015 ions cm−2 and a subsequent annealing process was applied to the doped AIS films at different temperatures under nitrogen atmosphere. The effects of implantation and annealing on the electrical and photoelectrical properties of AIS thin films were investigated through temperature dependent conductivity, spectral photoresponse and photoconductivity measurements under different illumination intensities. The electrical conductivity measurements showed that the room temperature conductivity values were determined as 2.4 × 10−7 (Ω cm)−1, 1.7 × 10−6 (Ω cm)−1 and 8.9 × 10−5 (Ω cm)−1 for B-doped films (B0), B-doped and annealed films at 200 °C (B2) and at 300 °C (B3), respectively. It was observed that the electrical conductivity improved as the annealing temperature increased up to 400 °C at which the AIS thin films showed degenerate semiconductor behaviour. The spectral distribution of the photoresponse curves indicated three local maxima located at 1.63, 1.79 and 2.01 eV for B0 type films, 1.65, 1.87 and 2.07 eV for B2 type films and 1.73, 2.02 and 2.32 eV for B3 type films at room temperature. These three different energy values were ascribed to the splitting of the valence band due to spin–orbit interaction and crystalline lattice field effects. The first energy values of each set were determined to be energy band gaps of the AIS thin films. The photoconductivity measurements as a function of temperature and illumination intensity were performed on the B-doped AIS thin films in order to determine the nature of recombination processes in the films. The photoconductivity values were found to be thermally quenched for all types of thin films and the variation of photocurrent as a function of illumination intensity showed that the dependence of photocurrent on the intensity was supralinear. The two-centre recombination model was applied successfully in order to explain the photoconductivity behaviours of the films.

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Section: Temperature Dependent Spectral Photoresponsementioning

confidence: 99%

Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films

Çolakoğlu¹,

Parlak

Kulakçı

et al. 2008

J. Phys. D: Appl. Phys.

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“…After the entire growth, a post-growth annealing was performed at 800 C for 4 min to improve the crystal quality. [20][21][22][23] An additional p-i-n AlGaAs reference sample was grown under the same conditions but with no embedded quantum structure.…”

Section: Methodsmentioning

confidence: 99%

Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell

Elborg

Ding

et al. 2012

Jpn. J. Appl. Phys.

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We demonstrate an efficient two-color photoexcitation process in a GaNAs/AlGaAs multiple quantum well (MQW) solar cell. The introduction of N into the GaAs MQW induces a marked reduction in bandgap energy, forming a large conduction band offset, and the formation of localized states. Owning to this deep confinement, the thermal escape of photogenerated carriers from the QWs is greatly suppressed even at room temperature, resulting in a reduction in photocurrent. An additional photocurrent is generated by a two-color absorption process of sub-bandgap photons.

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“…For the annealed GaNAs sample, the relaxation of the In-plane and the internal strains induced by the rearrangement of the N configurations could also be used to explain why band splitting was not observed. 27) No change in the broadening parameter of the bandgap transition due to thermal annealing was observed. The PR signals of the GaNAsBi samples shown in Fig.…”

Section: Photoluminescence and Photoreflectancementioning

confidence: 97%

Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode

Hasegawa

Hasuike

Kanegae

et al. 2023

Jpn. J. Appl. Phys.

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We present a Raman scattering study of as-grown and annealed GaAsBi, GaNAs, and GaNAsBi epilayers grown by plasma-assisted molecular beam epitaxy. In particular, photo-excited longitudinal optical phonon-plasmon-coupled (LOPC) modes were investigated using excitation power-dependent measurements. The optical properties of the samples were characterized by photoluminescence and photoreflectance measurements. From Raman scattering, local vibrational modes and disordered activated modes originating from N- and Bi-alloying were confirmed. The strong photo-excited LOPC modes observed in GaAsBi can be attributed to hole trapping caused by the Bi-induced shallow localized states. The weak photo-excited LOPC modes observed in the as-grown GaNAs and GaNAsBi indicate rapid carrier trapping owing to the high defect density in these dilute nitride alloys. After thermal annealing of GaNAs and GaNAsBi, the heavily damped photo-excited LOPC modes were observed, which can be explained by the low electron mobilities related to the N-induced shallow localized states.

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Effects of rapid thermal annealing on the properties of GaNxAs1−x

Cited by 9 publications

References 27 publications

Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films

Effect of boron implantation on the electrical and photoelectrical properties of e-beam deposited Ag–In–Se thin films

Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell

Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode

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