2002
DOI: 10.1143/jjap.41.5668
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Effects of Rare-Earth Oxides on the Reliability of X7R Dielectrics

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Cited by 140 publications
(109 citation statements)
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“…The atomic substitution effects of rareearth R and Mg ions on BaTiO 3 ceramic materials have been investigated to satisfy the requirements of low dielectric loss, low microphonics, and long lifetime for the application of BaTiO 3 ceramics. [1][2][3][4][5][6][7] The Gd-and Mg-substituted barium titanate crystals (Ba 1−x Gd x )(Ti 1−x=2 Mg x=2 )O 3 were found as one of the suitable materials from the viewpoint of the dielectric properties and stability of ceramics. 8) Structure fluctuations of BaTiO 3 in the paraelectric cubic phase, especially the fluctuation of Ti ions, have also been discussed extensively in connection with the successive phase transition mechanism of BaTiO 3 .…”
Section: Introductionmentioning
confidence: 99%
“…The atomic substitution effects of rareearth R and Mg ions on BaTiO 3 ceramic materials have been investigated to satisfy the requirements of low dielectric loss, low microphonics, and long lifetime for the application of BaTiO 3 ceramics. [1][2][3][4][5][6][7] The Gd-and Mg-substituted barium titanate crystals (Ba 1−x Gd x )(Ti 1−x=2 Mg x=2 )O 3 were found as one of the suitable materials from the viewpoint of the dielectric properties and stability of ceramics. 8) Structure fluctuations of BaTiO 3 in the paraelectric cubic phase, especially the fluctuation of Ti ions, have also been discussed extensively in connection with the successive phase transition mechanism of BaTiO 3 .…”
Section: Introductionmentioning
confidence: 99%
“…8 Especially rare-earth-doped BTO ceramics are known to exhibit temperature stabilized dielectric properties. [9][10][11][12] Y, Dy, Ho and Er dopants sometimes referred as \magic dopants", can improve the lifetime of capacitor under certain formulations and heat treatment, however other trivalent dopants do not show this type of marked improvement. 13 Morrison et al reported that the La-doped BTO ceramics have shown enhanced dielectric constant $ 10,000 and its transition temperature (T C ) decreased with increasing La concentration.…”
Section: Introductionmentioning
confidence: 99%
“…In an effort to overcome deterioration under DC bias as explained earlier, doping with rare-earth elements was attempted and found to be effective. 41), 42) A large number of studies on rare-earth element substitution in BaTiO 3 have been carried out subsequently to reveal the mechanisms involved. Tsur et al 43), 44) described the effects of rare-earth doping in terms of defect chemistry, reporting that Er, Y, Ho and Dy occupy both Ba sites and Ti sites in BaTiO 3 , while La occupies only Ba sites.…”
Section: Rare-earth Dopingmentioning
confidence: 99%
“…They reported that in Ba excess materials, Ho occupies Ti sites, while in Ti excess materials, Ho occupies Ba sites. Sakabe et al 41) investigated the solution behavior of La, Sm, Dy and Yb in BaTiO 3 using XRD, as well as their effect on the long-term performance of MLCCs. They reported that La occupies Ba sites and Dy occupies both Ba and Ti sites.…”
Section: Rare-earth Dopingmentioning
confidence: 99%