Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and NH3

Abstract

The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and NH3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and NH3 were less than those observed for the nitrided film prepared by thermal annealing in only NH3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy

“…[1][2][3][4][5][6][7] All IPD structures used were prepared by low pressure chemical vapor deposition (LPCVD) and/or CVD methods. [1][2][3][4][5][6][7] According to our previous results of atomic layer deposition (ALD), [8][9][10][11] SiO 2 layers on Si have good interface characteristics and superior thickness uniformity at low temperature, and Si 3 N 4 layers have higher density and dielectric constants. In addition, Si 3 N 4 films are grown to greater thickness for the same effective oxide thickness at thinner SiO 2 films.…”