Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films

Choi, W. K.; Chong, Nui; Tan, Leng Seow; Han, L. J.

doi:10.1016/s0921-5107(99)00486-9

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…Among the popular technique being used are Plasma Enhanced CVD [4][5][6], ECR-Plasma enhanced CVD [7], Sputtering [8] and also HW-CVD [9][10][11]. The present study investigates optical and structural properties of aSiC:H films prepared at various methane to silane gas flow rate ratio using a HW-CVD system.…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

Azis

Rahman

Rusop³

et al. 2010

AIP Conference Proceedings

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Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

Azis

Rahman

Rusop³

et al. 2010

AIP Conference Proceedings

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“…W.K. Choi et al have observed the reduction of the conductivity and the interface trapped charge density of the hydrogenated amorphous SiC (a-SiC:H) films with increasing annealing temperature [8]. The effect of increasing optical transparence of the a-SiC:H films have been obtained while post-annealing resulting in the crystallization in the host materials [9].…”

Section: Introductionmentioning

confidence: 99%

<title>Thermal annealing effects on the optical properties of amorphous silicon carbide films deposited by pulsed laser ablation</title>

Zhang

et al. 2006

SPIE Proceedings

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Thermal annealing of amorphous SiC films deposited by pulsed laser ablation is performed at different temperature of 900-1050 C in vacuum condition. The structural and optical properties of the obtained films have been investigated by Micro-Raman scattering, UV-VIS transmission, and atomic force microscopy (AFM). It has been observed that the Raman bands related to SiC TO and LO modes appear and gradually shift to higher energy with increasing the annealing temperature, indicating that the crystallization of SiC occurs in the post-annealed films and their crystallinity increases.AFM results show that the post-annealed film is composed of compact nanoparticles and presents a rougher surface with respect to the as-deposited film. Optical band gaps deduced from UV-VIS transmission spectra are continuously increased from 1 .90 eV for as deposited films to 2.45 eV of the annealed films at temperature of 1050 C . The formation of SiC nanocrystallines and the improvement of crystallinity can account for this blue-shift effect of the optical band gap.

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Optimization of the contact resistance in the interface structure of n‐type Al/a‐SiC:H by thermal annealing for optoelectronics applications

Ambrosio

Torres

Zúñiga

et al. 2010

Physica Status Solidi (a)

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Phone: þ52 656 688 4841ext 4571, Fax: þ52 656 688 4841The presented work meets the requirements for integration of amorphous silicon carbon films with silicon technology in order to obtain a complete optoelectronic system such as light emitting diodes and its electronic readout circuits. The key enabler for this integration scheme is the low temperature of deposition of a-SiC:H films and an ohmic behavior in the interface metal/a-SiC:H. In this work, the optimization of the interface Al/a-SiC:H films are performed by means of thermal annealing timing. The a-SiC:H films were deposited by enhanced chemical vapor deposition from CH 4 /SiH 4 and C 2 H 2 /SiH 4 mixtures. The structural and optical properties of the deposited films are presented. An implantation phosphorous dose was used for doping before fabrication of patterned aluminum contacts. The implanted films were electrically characterized by the transfer length method (TLM) measuring a sheet resistance value as low as 171 MV/square. The Schottky behavior was improved to ohmic behavior after several hours in thermal annealing treatments at 350 8C, which allows to obtain a reasonable contact resistance values in the range from 8.6 to 26.8 kV.

show abstract

Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films

Cited by 5 publications

References 9 publications

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

<title>Thermal annealing effects on the optical properties of amorphous silicon carbide films deposited by pulsed laser ablation</title>

Optimization of the contact resistance in the interface structure of n‐type Al/a‐SiC:H by thermal annealing for optoelectronics applications

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