Effects of Sb2O3 on the microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics fabricated by two-step solid-state reaction route

Li, Jiaqi; Tang, Kai; Yang, Shuaijun; Zhu, Daoben

doi:10.1016/j.ceramint.2021.03.276

Cited by 23 publications

(8 citation statements)

References 36 publications

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“…The relative sintered density of the samples gradually increases with Co and Sb doping. This may be attributed to capillary pressure 44 during sintering due to the small melting point of Co 2 O 3 (895 1C) and Sb 2 O 3 (655 1C). The capillary pressure becomes concentrated at the junctions of the polycrystalline boundaries and efficiently fills the pore, resulting in lower porosity and a larger density.…”

Section: Resultsmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Wang,

Xu,

Chu

et al. 2024

J. Mater. Chem. C

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“…The breakdown voltage tester (5 kV DC, Rectifier Electronics, India) was used to determine the I-V characteristics of the samples. Generally, 𝛼, the nonlinear coefficient, is calculated using the subsequent equation: [34] 𝛼 = (log J 1 − log J 2 ) ∕ (log…”

Section: Methodsmentioning

confidence: 99%

Influence of ZnSb₂O₆ Doping on Phase, Electrical and Dielectric Properties of ZnO Varistors

Li,

Chen

et al. 2024

Cryst. Res. Technol.

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The present investigation reports the variations of the microstructure and electrical properties due to a change in the ZnSb2O6 content of ZnO varistors. The impact of the ZnSb2O6 additive on both microstructure and electrical properties in ZnO varistors is studied via the X‐ray diffraction (XRD) and an impedance analyzer. Zn7Sb2O12 spinel phase and single hexagonal ZnO phase are detected in ZnO varistors with the addition of ZnSb2O6. The ZnO varistors with 5 mol% ZnSb2O6 have the highest nonlinear coefficient (43.2) and the lowest leakage current density (3.96 A cm−2). The resistivity of grain boundary ρgb increases continuously with the increasing content of ZnSb2O6 as demonstrated by impedance measurements. Additionally, low values of dielectric loss at high frequencies suggest a ZnO varistor doped with ZnSb2O6 is suitable for high frequency device applications.

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“…ZnO-Bi2O3 microstructures at 1.0 mol% concentration of Bi2O3 had the smallest scale of particle and grain size. Previous study shows that the decrease in grain and particle size will increase the breakdown voltage and enhance the electrical properties of the varistors [8]. Thus, the ZnO-Bi2O3 binary system enables the formation of liquid phase and grain growth which depend on the specific diffusion mechanisms of liquid phase sintering [10].…”

Section: Sem Morphologymentioning

confidence: 97%

“…It can be noted that the presence of a greater phase of bismuth increases varistor homogeneity. The lineal intercept technique was used to calculate the average grain size of all the samples by the Equation (1), where L is the straight-line length that is randomly choosen on the SEM images, M is the magnification of SEM images and N represents the number of grain boundaries intercept by the line [8,9]. The average grain size for ZnO is 7.7 μm with standard deviation 1.5 μm.…”

Section: Sem Morphologymentioning

confidence: 99%

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

SANUSI¹,

Mohamed²,

AHMAD³

et al. 2022

J Met Mater Miner

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This study was done to investigate the impact of bismuth oxide (Bi2O3) composites on the zinc oxide (ZnO) properties for varistor applications. ZnO-Bi2O3 samples were prepared using a two-step process, precipitation, and solid-state method. Bi2O3 was added into ZnO at various concentrations (0, 0.5, 1.0 and 1.5 mol%). All samples were characterized using X-ray diffraction (XRD), Scanning electron microscope (SEM) and UV visible spectroscopy. XRD results have shown that the crystallite size of ZnO-Bi2O3 samples became smaller when Bi2O3 was added from 0.5 mol% to 1.0 mol%. However, the crystallite size of ZnO-Bi2O3 increased over 1.0 mol% of Bi2O3 concentration. The smallest particle and grain size of ZnO-Bi2O3 appeared when composite at 1.0 mol% concentration of Bi2O3. The homogeneity and smallest grain size might be suitable to be used for varistor application. The absorbance of ZnO-Bi2O3 decreased as the Bi2O3 concentration increased. Therefore, adding Bi2O3 at various concentrations into the ZnO host material can tailor its structural and optical properties.

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Effects of Sb2O3 on the microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics fabricated by two-step solid-state reaction route

Cited by 23 publications

References 36 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Influence of ZnSb₂O₆ Doping on Phase, Electrical and Dielectric Properties of ZnO Varistors

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

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Effects of Sb2O3 on the microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics fabricated by two-step solid-state reaction route

Cited by 23 publications

References 36 publications

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Research method and mechanism analysis of a novel high-performance quaternary Zn–Sr–Co–Sb varistor ceramic

Influence of ZnSb2O6 Doping on Phase, Electrical and Dielectric Properties of ZnO Varistors

Tailoring the structural and optical properties of zinc oxide with addition of bismuth oxide prepared by two step process

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Influence of ZnSb₂O₆ Doping on Phase, Electrical and Dielectric Properties of ZnO Varistors