2021
DOI: 10.1007/s13391-021-00270-3
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Effects of Se Doping on Thermoelectric Properties of Tetrahedrite Cu12Sb4S13−zSez

Abstract: Tetrahedrite Cu 12 Sb 4 S 13 is composed of abundant non-toxic components and has attracted attention as a promising thermoelectric material with low thermal conductivity at intermediate temperatures. The carrier concentration can be optimized by doping (substituting), thereby maximizing its power factor and reducing its thermal conductivity. In this study, Cu 12 Sb 4 S 13−z Se z (z = 0.1-0.4) compounds were synthesized using mechanical alloying and hot pressing. Our objective was to maintain a high power fact… Show more

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Cited by 10 publications
(2 citation statements)
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“…These substitutions can modulate the carrier density by filling valence band holes. Other atoms such as, Te, As, and Bi can substitute on the antimony site, , and finally Se on the sulfur site, in the tetrahedrite structure (Figure d). The band structures of Cu 12 Sb 4– x Te x Sb 13 compounds show that substituting two Te per formula unit ( x = 2) will achieve a semiconducting behavior.…”
Section: Introductionmentioning
confidence: 99%
“…These substitutions can modulate the carrier density by filling valence band holes. Other atoms such as, Te, As, and Bi can substitute on the antimony site, , and finally Se on the sulfur site, in the tetrahedrite structure (Figure d). The band structures of Cu 12 Sb 4– x Te x Sb 13 compounds show that substituting two Te per formula unit ( x = 2) will achieve a semiconducting behavior.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 7. Carrier-dependent Seebeck coefficient (a) and mobility (b) of the investigated Cu-rich tetrahedrite materials compared with literature data[50,56,57,[63][64][65]. Solid lines depict the S(p) dependences calculated using the Kane band model and considering different effective masses.…”
mentioning
confidence: 99%