Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode

Abstract

In this work, we report on laser diodes with intermixed InAlGaAs multi-quantum well (MQW) as the active gain medium. Using an impurity-free vacancy-enhanced disordering technique, several silicon nitride-capped InAlGaAs MQW samples are intermixed to different levels by varying the rapid-annealing temperatures from 730 °C to 830 °C. The intermixed laser diodes operate at wavelengths spanning from 1520 nm to 1400 nm, while exhibiting an increase in threshold current from 25 mA (as-grown) to 45 mA, and a decrease in slope efficiency from 0.101 W A −1 (as-grown) to 0.068 W A −1 as the intermixing extent is increased. For a sample that was annealed at 770 °C while only covered with a silicon dioxide film, the lasing wavelength is 1543 nm compared to 1550 nm for the as-grown laser wavelength, and the lasing threshold current is 26 mA with a slope efficiency of 0.08 W A −1 .

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

“…The main paths are generation at the surface (Schottky defect formation) and generation in the volume (Frenkel pair formation). In the first case, to consider the vacancy formation, it is necessary to take into account the state of the surface (e.g., the coating type and structure [ 34 , 35 , 36 , 37 , 38 ]) and the free surface exchange by atoms and molecules with the environment [ 39 , 40 , 41 , 42 ]. For most semiconductor materials, spontaneous Frenkel pair formation is considered an unlikely source of vacancies thanks to the high energy of forming two defects as a tight pair.…”

Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

“…The main paths are a generation at the surface (Schottky defect formation) and in the volume (Frenkel pair formation). In the first case, to consider the vacancy formation, it is necessary to take into account the surface structure [ 42 , 43 , 44 , 45 , 46 ] and the free surface exchange by atoms and molecules with the environment [ 28 , 47 , 48 , 49 ]. Frenkel pair formation is considered an unlikely source of vacancies for most semiconductor materials due to the high formation energy.…”

XXVII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2023 г. Формирование заряженных вакансий в анионной подрешетке AlAs

“…Нанофизика и наноэлектроника" тия [20][21][22]), а также обмен атомами и молекулами свободной поверхности с окружающей средой [14,17,23,24]. В объемном кристалле динамику формирования вакансий можно описать кинетическим уравнением [13]:…”