Effects of Si⁵⁺Ion Irradiation on Poly(3-methyl thiophene) Films

Abstract

Poly(3-methyl thiophene) has been synthesized by the chemical oxidation polymerization method using FeCl 3 . The powder has been dissolved in CHCl 3 and thin films of thickness 2 mm are prepared on glass and Si substrates. The polymerization has been confirmed by FTIR spectrum. The films are irradiated by 60 MeV Si 5þ ions at different fluences and modifications in optical, electrical and structural properties are studied. FTIR spectra show methyl group evolution after irradiation. The optical band gap decreases after irradiation and dc conductivity increases four orders of magnitude after irradiation at the highest fluence. The conduction mechanism has been found mainly by band conduction.