2009
DOI: 10.1016/j.jallcom.2008.12.031
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Effects of Si4+ and B3+ doping on the photoluminescence of BaMgAl10O17:Eu2+ phosphor under UV and VUV excitation

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Cited by 13 publications
(7 citation statements)
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“…4) indicates that Eu 2+ migrate from the sites emitting long wavelength (spinel block) to those emitting short wavelength (mirror layer). Associated with the consideration that the migration of Eu 2+ in BAM from mirror planes to spinel blocks is another essential mechanism of the ther- mal degradation besides the oxidation of Eu 2+ to Eu 3+ [18], the introduction of Mg 2+ to substitute Al 3+ will certainly improve its thermal stability.…”
Section: Resultsmentioning
confidence: 99%
“…4) indicates that Eu 2+ migrate from the sites emitting long wavelength (spinel block) to those emitting short wavelength (mirror layer). Associated with the consideration that the migration of Eu 2+ in BAM from mirror planes to spinel blocks is another essential mechanism of the ther- mal degradation besides the oxidation of Eu 2+ to Eu 3+ [18], the introduction of Mg 2+ to substitute Al 3+ will certainly improve its thermal stability.…”
Section: Resultsmentioning
confidence: 99%
“…Currently, BaMgAl 10 O 17 : Eu 2+ (BAM: Eu 2+ ) has been regarded as the preferred blue-emitting phosphor for w-LEDs based on the n-UV LED, but BAM shows a poor absorption band around near-UV range, which is not well suitable for current available commercial n-UV emitting InGaN chips [7]. In addition, the synthesis of BAM: Eu 2+ is usually at temperature as high as 1300-1600 • C for several hours, which leads to the increase of w-LEDs cost [8]. Thus, it is necessary to search for new blue phosphors those can be efficiently excited in the n-UV range, especially near 400 nm to enhance the luminous efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…The BAM phosphor has been an important focus in the field of luminescent materials [1][2][3][4][5][6][7].…”
Section: Introductionmentioning
confidence: 99%