Effects of sidewall spacer layers on thermal and low frequency noise performance of SOI UTB MOSFETs

Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise. Methods:: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device. Results:: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise. Conclusion:: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.

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Effects of sidewall spacer layers on thermal and low frequency noise performance of SOI UTB MOSFETs

Cited by 3 publications

References 18 publications

Investigation on noise performance of InAsxSb1−x MOSFETs with compositional variations

Investigation on noise performance of InAsxSb1−x MOSFETs with compositional variations

Impacts of trapped charges on the performance of dielectric modulated junctionless Trench DG FET biosensors

Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications

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