Effects of sputtering and assisting ions on the orientation of titanium nitride films fabricated by ion beam assisted sputtering deposition from metal target

Zhang, Linao; Tong, Shuo; Liu, Haonan; Li, Yinglan; Wang, Zhi

doi:10.1016/j.matlet.2016.02.100

Cited by 24 publications

(12 citation statements)

References 18 publications

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“…Among the "bottom up" techniques such ones as: ion [31,32] and magnetron sputtering [33,34], ion implantation [35,36], plasma techniques [37,38] and chemical methods [39] should be distinguished for their advantageous application to the development of nano-sized materials. These methods consist in transiting the material from its solid state (referred to as a target) into the gaseous phase followed by its deposition onto the substrate.…”

Section: Introductionmentioning

confidence: 99%

The effect of sputtering atmosphere parameters on dielectric properties of the ferromagnetic alloy – ferroelectric ceramics nanocomposite (FeCoZr)x(PbZrTiO3)(100−x)

Boiko

Kołtunowicz

Żukowski

et al. 2017

Ceramics International

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Two samples of the ferromagnetic alloyferroelectric ceramics nanocomposite (FeCoZr) x (PbZrTiO 3 ) (100−x) of similar metallic phase contents have been produced using ion-beam sputtering in the atmosphere of argon and oxygen. The samples have been produced in order to examine the influence of sputtering atmosphere parameters on electrical properties of the tested materials.In a nanocomposite of a reduced oxygen content, a conductivity increase by about three orders occurs along with the increasing frequency, which is associated with the occurrence of hopping recharging. Over the whole area of low measuring frequencies, negative values of the phase shift and a capacitive type of conductivity occur. For the frequency of about 10 6 Hz, the phase shift reaches zero, which corresponds to the voltage resonance phenomenon. For higher frequencies, positive phase shift values and inductive conductivity occur. For a sample of a higher oxygen content, phenomena of voltage resonance (low frequency values) and current resonance (high frequency values) can be observed. When the oxygen content increases, frequency dependences of the phase difference get shifted into the low frequency area. This is associated with the surface oxidation or a complete oxidation of the metallic-phase nanograins, which increases the potential barrier as well as with an increase of the relaxation time activation energy. For the sample of a higher oxygen content, an increase of the conductivity activation energy has been observed in the low temperature area.

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Section: Introductionmentioning

confidence: 99%

The effect of sputtering atmosphere parameters on dielectric properties of the ferromagnetic alloy – ferroelectric ceramics nanocomposite (FeCoZr)x(PbZrTiO3)(100−x)

Boiko

Kołtunowicz

Żukowski

et al. 2017

Ceramics International

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“…No other characteristic diffraction peak exists in the patterns. It can be concluded that the films are B1-structured and the preferred orientation is (111), which has growth advantages [ 10 ]. The results show that all the (Ti, Zr)N

films exist as a kind of solid solution, in which the Ti and Zr atoms are distributed in a rocksalt crystal structure with a certain degree of uniformity.…”

Section: Resultsmentioning

confidence: 99%

“…Titanium nitride and zirconium nitride are the most studied nitrides for its high conductivity, chemical stability and high melting point. The electronic and optical properties of B1-structured nitrides can be tuned by their composition for their nonstoichiometry [ 10 , 11 , 12 , 13 , 14 ]. Recent studies have shown the versatility of nitride plasmonic materials [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Structural, Compositional, and Plasmonic Characteristics of Ti–Zr Ternary Nitride Thin Films Tuned by the Nitrogen Flow Ratio in Magnetron Sputtering

et al. 2020

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Ternary nitride gives high diversity and tunability of the plasmonic materials. In this work, highly crystallized ternary (Ti, Zr)N x films were prepared by magnetron co-sputtering with different nitrogen gas flow ratio R n . The structural and plasmonic properties of the films tuned by R n were investigated. All the films are solid solutions of TiN x and ZrN x with a rocksalt structure and (111) preferred orientation. The films are nitrogen-overstoichiometric and the main defects are cation vacancies. Increased R n reduces the zirconium content, and therefore leads to the reduction of lattice constant and enhancement of the crystallinity. As R n increases, the screened plasma frequency decreases for the reduction of free electron density. The maximum of the energy loss spectra of (Ti, Zr)N x films shifts to long-wavelength with R n increasing. The calculated electronic structure shows that increased nitrogen content enhances the electronic density of states of nitrogen and reduces that of metal, and therefore elevates the energy level at which interband transition is exited. The results show that (Ti, Zr)N x films give a relatively high plasmonic quality in the visible and near-infrared region, and the film properties can be significantly tuned by the nitrogen content.

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“…Today TiN has already received extensive applications, ranging from hard and protective coating in ornament industry to diffusion barrier layers in semiconductor industry [10]. Besides above applications, TiN has also been adopted as the main constituent of the heater for phase-change random access memory (PCRAM) during last decade [11,12].…”

Section: Methodsmentioning

confidence: 99%

Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode

Wang

Gong

Yang

et al. 2016

Nanotechnology Reviews

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Phase-change probe memory has been extensively regarded as one of the most prospective candidates to satisfy the recording density requirement from the incoming age of big data.However, in spite of recent advances, the energy consumption of phase-change probe memory still remains fairly high due to the use of the diamond-like carbon bottom electrode usually having a relatively high electric resistivity. In this case, the possibility of using titanium nitride to replace the diamond-like carbon as the electrode materials is investigated in this paper. The thickness and time dependent resisitivity of titanium nitride film is measured, allowing for a more conductive characteristic and a better stability than diamond-like carbon film at the same condition. Consequently, the writing of crystalline bit using the previously designed phase-change probe memory architecture but with titanium nitride bottom electrode is performed experimentally, and results show that using titanium nitride as bottom electrode would enable an achievement of ultra-high recording density with lower energy consumption than the phase-change stack with diamond-like carbon electrode.

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Effects of sputtering and assisting ions on the orientation of titanium nitride films fabricated by ion beam assisted sputtering deposition from metal target

Cited by 24 publications

References 18 publications

The effect of sputtering atmosphere parameters on dielectric properties of the ferromagnetic alloy – ferroelectric ceramics nanocomposite (FeCoZr)x(PbZrTiO3)(100−x)

The effect of sputtering atmosphere parameters on dielectric properties of the ferromagnetic alloy – ferroelectric ceramics nanocomposite (FeCoZr)x(PbZrTiO3)(100−x)

Structural, Compositional, and Plasmonic Characteristics of Ti–Zr Ternary Nitride Thin Films Tuned by the Nitrogen Flow Ratio in Magnetron Sputtering

Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode

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