Effects of STI-fill thickness on the CMP process defects

Seo, Yong-Jin; Kim, Gi-Uk; Lee, Woo-Sun

doi:10.1016/j.mee.2003.11.005

Cited by 15 publications

(14 citation statements)

References 6 publications

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“…On the other hand, various dispersants have been used to disperse ceria in aqueous media. ,,, The anionic dispersant, poly(acrylic acid) (PAA), is widely used to disperse ceria nanoparticles in the CMP process since the insufficient repulsive forces between the abrasives and SiO 2 film surface can induce defects such as microscratches on the wafer surface. − Thus, the ceria nanoparticles are dispersed with PAA for CMP application. Figure S5 and S6 in the Supporting Information show the adsorption isotherm of PAA on NO 3 –ceria and OH–ceria at pH 7.0.…”

Section: Resultsmentioning

confidence: 99%

Role of the Surface Chemistry of Ceria Surfaces on Silicate Adsorption

Seo

Lee

Moon

et al. 2014

ACS Appl. Mater. Interfaces

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Ceria nanoparticles (NPs) have been widely explored as a promising material in various fields. As synthesized under various physicochemical conditions, it exhibits the different surface chemistry. Here, the role of hydroxyl and nitrate group on ceria surface, formed under various physicochemical conditions, for the silicate adsorption was experimentally and theoretically investigated based on the adsorption isotherms and theoretical analyses using density functional theory (DFT) calculation. Experimental results acquired from adsorption isotherms with Freundlich model indicated that the nitrate group shows a much higher affinity with silicate than the hydroxyl groups. These phenomena were demonstrated through the theoretical approaches that exhibit the binding energy of the NO3-ceria (-4.383 eV) on the SiO2 surface being much higher than that of the OH-ceria (-3.813 eV). In good agreement with the experimental and the theoretical results based on adsorption properties, the results of chemical mechanical planarization (CMP) also show that the nitrate groups significantly enhance the removal of SiO2 than the hydroxyl groups. The results investigated in this study will provide researchers, studying the ceria NPs, with guidelines on the importance of exploring the surface chemistry of ceria.

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Section: Resultsmentioning

confidence: 99%

Role of the Surface Chemistry of Ceria Surfaces on Silicate Adsorption

Seo

Lee

Moon

et al. 2014

ACS Appl. Mater. Interfaces

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“…By using ceria-based high selectivity slurry, which has much higher Si 3 N 4 to SiO 2 selectivity than silica-based slurry, the polishing process can be stopped on the pad nitride surface, thereby resulting in uniform field oxide thickness. However, the ceria-based high selectivity slurry is generally known to cause severe dishing of field oxide and higher levels of post-CMP defects compared to conventional silica-based slurry [6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries

Lee

Hwang²,

Kim

et al. 2007

Microelectronic Engineering

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“…However, polishing slurries include abrasives which cause severe damage to the wafers after polishing. The problems commonly found in the final CMP process include surface scratching, polishing haze and residual particles [6][7][8][9][10][11]. These defects generated during the CMP process, including pin-holes, a lower punch-through voltage and the increase of current leakage, can directly influence the electrical characteristics and productivity of the devices in ULSI.…”

Section: Introductionmentioning

confidence: 99%

The Effect of the physico-chemical properties of cellulosic polymers on the Si wafer polishing process

Kim¹,

Kim²,

Paik³

et al. 2006

J Electroceram

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Cellulosic polymers were used as organic additives to reduce the wafer surface roughness during the polishing process. The physico-chemical affinity of the polymer for the wafer and the formation of a hydro-plane on the Si wafer surface were investigated to identify the role of the polymeric additives in the wafer-polishing process. Two different polymers, hydroxyethyl cellulose (HEC) and carboxymethyl cellulose (CMC), were employed as a surface modifier for the wafer. The wettability of the Si surface varied markedly between the different suspensions prepared with HEC and CMC due to different adsorptive behaviors. As a result, the suspension prepared with HEC reduced the haze level and micro-roughness of the wafer, enhancing overall polishing performance.

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Effects of STI-fill thickness on the CMP process defects

Cited by 15 publications

References 6 publications

Role of the Surface Chemistry of Ceria Surfaces on Silicate Adsorption

Role of the Surface Chemistry of Ceria Surfaces on Silicate Adsorption

Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries

The Effect of the physico-chemical properties of cellulosic polymers on the Si wafer polishing process

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