Effects of strain on Goos-Hänchen shifts of monolayer phosphorene

Li, Kaihui; Cheng, Fang

doi:10.1016/j.physe.2017.12.012

Cited by 9 publications

(4 citation statements)

References 21 publications

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“…The results reported here are consistent with the theoretically observed critical points. 38,46,47 Although uniaxial strain is included in a standard model Hamiltonian at the tight-binding level, this might not nonetheless be exactly the same result as DFT and experiments observe. It is worth deriving the border between the energy gap and the strain modulus (for both 3 b < 0 and 3 b > 0) as…”

Section: Two-band Strained Hamiltonian Model Of Phosphorenementioning

confidence: 98%

Strain engineering of optical activity in phosphorene

et al. 2019

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Section: Two-band Strained Hamiltonian Model Of Phosphorenementioning

confidence: 98%

Strain engineering of optical activity in phosphorene

et al. 2019

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“…The GH migration results from the role dispersion of the Fresnel reflection coefficient [2,3]. When the phase of reflection coefficient changes significantly near the critical angle of total reflection, GH effect can be enhanced [4][5][6]. Due to the advantages of GH shift in precision measurement and optical sensing, new attention has been observed [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

High-Sensitivity Goos-Hänchen Shifts Sensor Based on BlueP-TMDCs-Graphene Heterostructure

Han

Pan

et al. 2020

Sensors

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Surface plasmon resonance (SPR) with two-dimensional (2D) materials is proposed to enhance the sensitivity of sensors. A novel Goos–Hänchen (GH) shift sensing scheme based on blue phosphorene (BlueP)/transition metal dichalogenides (TMDCs) and graphene structure is proposed. The significantly enhanced GH shift is obtained by optimizing the layers of BlueP/TMDCs and graphene. The maximum GH shift of the hybrid structure of Ag-Indium tin oxide (ITO)-BlueP/WS2–graphene is −2361λ with BlueP/WS2 four layers and a graphene monolayer. Furthermore, the GH shift can be positive or negative depending on the layer number of BlueP/TMDCs and graphene. For sensing performance, the highest sensitivity of 2.767 × 107λ/RIU is realized, which is 5152.7 times higher than the traditional Ag-SPR structure, 2470.5 times of Ag-ITO, 2159.2 times of Ag-ITO-BlueP/WS2, and 688.9 times of Ag-ITO–graphene. Therefore, such configuration with GH shift can be used in various chemical, biomedical and optical sensing fields.

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“…Thanks to its wide application in all optical switches [2], optical sensing [3], beam steering [4], precise measurement [5] and other fields, the GH shift has received widespread attention from researchers in the past few decades. Researchers have conducted extensive research on the enhancement and manipulation of the GH shift in various materials and different structures, such as monolayer phosphorene [6], metamaterials [7], photonic-magnonic crystals [8], temporally dispersive attenuative materials [9], photonic crystals [10,11] and so on. At the same time, researchers are also trying to combine specific mechanisms to achieve the enhancement and manipulation of the GH shift.…”

Section: Introductionmentioning

confidence: 99%

Magnetically Tunable Goos–Hänchen Shift of Reflected Beam in Multilayer Structures Containing Anisotropic Graphene

Ye,

Zhang,

Jiang

2023

Coatings

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In this paper, the magnetically tunable Goos–Hänchen (GH) shift of a reflected beam at terahertz frequencies is achieved by using a multilayer structure where three layers of anisotropic graphene are inserted. The enhanced GH shift phenomenon results from the local field enhancement owing to the excitation of graphene surface plasmon polaritons at the interface between two dielectric materials. By considering the quantum response of graphene, the GH shift can be switched from negative to positive by harnessing the anisotropic conductivity of graphene, and the GH shift can be actively tuned through the external magnetic field or by controlling the structural parameters. By setting appropriate magnetic field and structural parameters, we can obtain GH values of −140 microns to 220 microns in the terahertz band. This enhanced and tunable GH shift is promising for fabricating graphene-based terahertz shift devices and other applications in nanophotonics.

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Effects of strain on Goos-Hänchen shifts of monolayer phosphorene

Cited by 9 publications

References 21 publications

Strain engineering of optical activity in phosphorene

Strain engineering of optical activity in phosphorene

High-Sensitivity Goos-Hänchen Shifts Sensor Based on BlueP-TMDCs-Graphene Heterostructure

Magnetically Tunable Goos–Hänchen Shift of Reflected Beam in Multilayer Structures Containing Anisotropic Graphene

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