2014
DOI: 10.1103/physrevb.90.125118
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Effects of strain on the band structure of group-III nitrides

Abstract: We present a systematic study of strain effects on the electronic band structure of the group-III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density functional theory (DFT) with band-gap-corrected approaches including hybrid functional (HSE) and quasiparticle G 0 W 0 methods. We study strain effects under realistic strain conditions, hydrostatic pressure and biaxial stress. The strain-induced modification of the band structures is found to be nonlinear; transition ener… Show more

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Cited by 118 publications
(85 citation statements)
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“…∆µ ZnO must be greater than the critical energy for nucleation in order to maintain the NW growth. [39] The out-of-plane phase switching image for the ordered three-phase "nanoman"like structure in Figure 4b further confirms the ferroelectric response. This results in a uniform distribution of ZnO NW diameter growing inside Au-BTO matrix.…”
Section: Nanocompositessupporting
confidence: 59%
“…∆µ ZnO must be greater than the critical energy for nucleation in order to maintain the NW growth. [39] The out-of-plane phase switching image for the ordered three-phase "nanoman"like structure in Figure 4b further confirms the ferroelectric response. This results in a uniform distribution of ZnO NW diameter growing inside Au-BTO matrix.…”
Section: Nanocompositessupporting
confidence: 59%
“…[20], as well as analytical band structures fitted to our in-house density functional theory calculations. The density functional calculations use the Heyd-Scuseria Ernzerhof (HSE) hybrid functional, which has been shown to reproduce band gaps in a good agreement with experimental values [21], [22]. In terms of device-level characteristics, the most important difference between the band structures of Ref.…”
Section: Band Structurementioning
confidence: 98%
“…Step bunches aligned along [11][12][13][14][15][16][17][18][19][20] are observed as a result of the macroscopic 2 miscut of the bulk m-plane substrate, but the surface in between the step bunches is flat and smooth. The typical step-height is $30 nm.…”
Section: (A)mentioning
confidence: 99%
“…Therefore, by combining the CL, and TEM data, we show unequivocally that the low energy emission features originate from the step bunches where InGaN MQWs form on the semi-polar facets. 13 By calculating the emission wavelength using a kÁp perturbation approach, 15,16 we can show that the large red-shift on the semi-polar facet QW can be mainly attributed to the significant increase in indium content and partly due to a change in the QW thickness. The internal electric fields are not the main factor, and the change of growth orientation, from m-plane to semi-polar (3-30-2) plane, only results in a negligible red-shift.…”
Section: (A)mentioning
confidence: 99%