contain dendritic structures with a fractal dimension consistent with a diffusionlimited aggregation process. [3,6] Although a variety of degradation prevention techniques have been reported such as encapsulation with hexagonal boron nitride [9] and polymers, [10] use of novel gate dielectrics, [11] and placement in an environment with a desiccant [3] or in a vacuum, [4] such techniques are not applicable for ambientair applications such as gas sensors. To our knowledge, the stability of bilayer (BL) and thicker-layer MoS 2 films in ambient air has not been extensively studied. It is important to understand the stability of such films for developing applications and having a better understanding of ML degradation. In this paper, we report on the structural stability of preheated and as-grown BL and thicker-layer MoS 2 films in ambient air. The films are grown using CVD on SiO 2 substrates and studied using atomic force microscopy (AFM), and Raman and PL spectroscopies.BL and thicker-layer MoS 2 and other TMD films, nanosheets, [12] and nanostructures, [13] although having indirect band gaps, have attracted considerable interest because of their useful properties. For example, BLs and thicker-layers have higher electrical conductivities than MLs due to their higher density of states and more effective screening of impurities in the substrate. [14] In addition, BL device yield is typically higher than ML device yield, due to the greater mechanical strength of BLs. [15,16] BL and thicker-layer TMD films offer layer control of properties such as spin-orbit coupling, [17] interlayer coupling, [18] and band gap. [19] Varying the twist angle between layers in BLs has been reported to result in twist-dependent valley and band alignment, [20] and Moiré pattern excitons. [21] The ambient-air degradation of CVD-grown ML MoS 2 and other ML TMD films was first reported by Gao et al. [3] They observed that ML MoS 2 and WS 2 grown on SiO 2 substrates developed extensive cracking, morphological changes, and quenching of PL after exposure to ambient air at room temperature (RT) for a period of about a year. The degradation was attributed to oxidation along grain boundaries and other defects. It was found that water vapor in the air was necessary for degradation to occur since films did not degrade in a dry box. In addition, Budania et al. [4] reported that mechanically exfoliated thin multilayer MoS 2 flakes on SiO 2 developed speckles in air at a high relative humidity (RH) of 60% over a period of about a year. Kotsakidis et al. [5] reported