Effects of Stress and Depolarization on Electrical Behaviors of Ferroelectric Field-Effect Transistor

Chen, Yiqiang; En, Yunfei; Huang, Yun; Kong, Xiao; Fang, Wenxiao

doi:10.1109/led.2011.2171915

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…Here, we aim to provide guidance about designing a programmable fast switching MOSFET with better performance, by considering factors which were rarely included in previous modeling, but which may strongly affect the polarization reorientation and size effect of ferroelectric oxides. Many analytical models based on the Landau-Ginzburg-Devonshire (LGD) theory have been proposed previously [7,8] to simulate the electrical behaviors of MOSFETs. These models provide an insightful understanding about the mechanisms of ferroelectric oxide based MOSFETs and guide the fabrication of novel devices.…”

Section: Introductionmentioning

confidence: 99%

Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Rappe

2015

Phys. Rev. Applied

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The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors is investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization rotations and the electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we provide guidance in designing electronic logic devices with low operating voltages and low active energy consumption: first, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 mV/decade. We also demonstrate that, compared with polarization inversion, polarization rotation offers significant advantages, including a lower energy barrier and a wider range of transferability in nano-electronic devices.

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Section: Introductionmentioning

confidence: 99%

Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Rappe

2015

Phys. Rev. Applied

View full text Add to dashboard Cite

show abstract

“…Here, we aim to provide guidance about designing a programmable fast switching MOS-FET with proper size, by considering factors which were rarely included in previous modeling, but may strongly affect the polarization reorientation and size effect of ferroelectric oxides. Many analytical models based on the Landau-Ginzburg-Devonshire (LGD) theory have been proposed previously [7,8] to simulate the electrical behaviors of MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect

Qi,

Rappe

2015

Preprint

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The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization rotations and the electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 mV/decade.We believe that this model could provide guidance in designing electronic logic devices with low operating voltages and low active energy consumption.

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A multi-scale model linking microstructure and macro electric behaviors of ferroelectric field effect transistor

Jiang

Hao

Yang

et al. 2020

Current Applied Physics

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Effects of Stress and Depolarization on Electrical Behaviors of Ferroelectric Field-Effect Transistor

Cited by 5 publications

References 15 publications

Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Low Operation Voltage Ferroelectric Field-Effect Transistor Based on Polarization Rotation Effect

A multi-scale model linking microstructure and macro electric behaviors of ferroelectric field effect transistor

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