Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation

Jasiński, Jacek B.; Yu, K. M.; Walukiewicz, W.; Liliental‐Weber, Z.; Washburn, J.

doi:10.1016/s0921-4526(01)00930-9

Cited by 2 publications

(3 citation statements)

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“…In addition to typical implantationinduced defects, void-like defects were also present in both samples. In the GaAs sample implanted with N only, a layer containing a very high density of small voids, with an average size of about 2-3 nm, started forming just below the surface and continued to a depth of about 0.6-0.7 µm [26,27]. Such void-like defects are not observed in samples implanted with S and are present only in N-implanted samples.…”

Section: Channellingmentioning

confidence: 89%

“…In this context, because only a small amount of N (<1%) can lead to a large reduction in the energy band gap of III-N x -V 1−x materials, ion implantation is an attractive and feasible alternative approach to synthesize these alloys. In the first part of this paper we review our efforts in the synthesis of GaN x As 1−x , InN x P 1−x and Al y Ga 1−y N x As 1−x alloy thin films by N ion implantation [9,20,[24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

“…In the second part of this paper we review our work on the n-type doping of GaN x As 1−x alloys doped heavily with Se and S via MOCVD growth or ion implantation methods [26,27,[36][37][38]. The effects of the N-induced conduction band modifications on the maximum free electron concentration in GaN x As 1−x as well as the implications on device fabrication will be discussed.…”

Section: Introductionmentioning

confidence: 99%

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Ion beam synthesis and n-type doping of group III N_x V_1 xalloys

2002

Semicond. Sci. Technol.

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Investigations on the synthesis of group III-N x -V 1−x alloy including GaN x As 1−x , InN x P 1−x and Al y Ga 1−y N x As 1−x using N ion implantation followed by rapid thermal annealing are reviewed. The fundamental band-gap energy for the ion beam synthesized III-N x -V 1−x alloys is found to decrease with increasing N-implantation dose and can be quantitatively described by the anticrossing interaction between the localized N-states and the extended states of the semiconductor matrix. N activation efficiencies in these N ion synthesized alloy films are found to be low, ∼10% for GaN x As 1−x and ∼20% for InN x P 1−x . A preliminary study showed that using pulsed laser melting followed by rapid thermal annealing greatly enhanced the N activation efficiency (∼50%) in N-implanted GaAs. The N-induced conduction band modification also results in an enhancement of the maximum free electron concentration in GaN x As 1−x . A maximum free electron concentration as high as 7 × 10 19 cm −3 was observed in heavily Se-doped Ga 1−3x In 3x N x As 1−x (x = 0.033) films, more than 20 times larger than that observed in GaAs films grown under similar conditions. A similar increase in free electron concentration was also achieved in a S-implanted GaN x As 1−x thin film. Combining the ion synthesis of diluted nitrides and S implantation doping techniques, we realized a large increase in the electrical activation of S co-implanted with N in GaAs within a thin near-surface region (∼500 Å), indicating the formation of a heavily doped thin diluted GaN x As 1−x alloy layer with x ∼ 0.3%. This result has important practical implications on the fabrication of low-resistance, non-alloyed ohmic contacts to n-type GaAs.

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Section: Channellingmentioning

confidence: 89%