Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers

Sun, Yanhong; Li, Kuilong; Dong, Junping; Zeng, Xiaolin; Sheng, Yu; Zhao, Yongming; Zhao, Chunyu; Yang, Hui

doi:10.1007/s10854-013-1626-z

Cited by 1 publication

(1 citation statement)

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“…It is known that a substrate miscut can lead to strain relaxation in epitaxial thin films via alignment of the threading dislocations [70][71][72], but then the zincblende GaN layer would be less strained in the miscut direction (ε x ) than in the perpend icular direction (ε y ). Since we observed the opposite case, we can rule out this relaxation mechanism for this sample.…”

Section: Thermal Mismatch Strain and Growth Induced Strainmentioning

confidence: 99%

X-ray diffraction analysis of cubic zincblende III-nitrides

Frentrup

Lee

Sahonta

et al. 2017

J. Phys. D: Appl. Phys.

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Solving the green gap problem is a key challenge for the development of future LED-based light systems. A promising approach to achieve higher LED efficiencies in the green spectral region is the growth of III-nitrides in the cubic zincblende phase. However, the metastability of zincblende GaN along with the crystal growth process often lead to a phase mixture with the wurtzite phase, high mosaicity, high densities of extended defects and point defects, and strain, which can all impair the performance of light emitting devices. X-ray diffraction (XRD) is the main characterization technique to analyze these device-relevant structural properties, as it is very cheap in comparison to other techniques and enables fast feedback times. In this review, we will describe and apply various XRD techniques to identify the phase purity in predominantly zincblende GaN thin films, to analyze their mosaicity, strain state, and wafer curvature. The different techniques will be illustrated on samples grown by metalorganic vapor phase epitaxy on pieces of 4″ SiC/Si wafers. We will discuss possible issues, which may arise during experimentation, and provide a critical view on the common theories.

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Section: Thermal Mismatch Strain and Growth Induced Strainmentioning

confidence: 99%