Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films

Hibbs, Mary; Johansson, B.‐O.; Sundgren, J.‐E.; Helmersson, Ulf

doi:10.1016/0040-6090(84)90003-8

Cited by 81 publications

(12 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Therefore, the film exhibits a lower hardness value. As the pulse bias voltage is applied, the ion bombarding energy increases which makes the crystal size smaller and the films dense [13,14]. Therefore, the hardness of the film tends to increase.…”

Section: Mechanical Propertiesmentioning

confidence: 97%

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Wang

Song

et al. 2004

Materials Letters

View full text Add to dashboard Cite

Section: Mechanical Propertiesmentioning

confidence: 97%

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Wang

Song

et al. 2004

Materials Letters

View full text Add to dashboard Cite

“…The reduction in TiN density results from the presence of hydrogen (6% of film composition) disrupting the Ti-N network bonding, leading to the decreased elastic properties compared to cubic single crystal TiN (Table II). The elastic constants and moduli of the TiN layers also depend on growth conditions such as the ratio of gases, 30 bias potential, 31,32 temperature, 33 defects, 34 and substrate material. 35 In addition, compositional variations, particularly the evolution of an interfacial TiO layer during sputter deposition 35 or variations in nitrogen content, can affect the mechanical properties of thinner films.…”

Section: A Low-k Sioch:tin Structuresmentioning

confidence: 99%

Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

Zizka

King

Every

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Surface Brillouin light scattering measurements are used to determine the elastic constants of nanoporous low-k SiOC:H (165 nm) and high-k HfO 2 (25 nm) as well as BN:H (100 nm) films grown on Si substrates. In addition, the study investigates the mechanical properties of ultra-thin (25 nm) blanket TiN cap layers often used as hard masks for patterning, and their effects on the underlying low-k dielectrics that support a high level of interconnected porosity. Depending on the relative material properties of individual component layers, the acoustic modes manifest as confined, propagating, or damped resonances in the light scattering spectra, thereby enabling the mechanical properties of the ultra-thin films to be determined. V

show abstract

“…The TiN films were grown using reactive magnetron sputtering to a thickness of 4 pm. The process used for depositing these films has been described in detail elsewhere (Helmersson et al, 1985;Hibbs et al, 1984) but a brief description can also be found in the Results section of this paper.…”

Section: Mechanical Handling and Thinningmentioning

confidence: 99%

Cross‐Section preparation for tem of film‐substrate combinations with a large difference in sputtering yields

Helmersson

Sundgren

1986

J. Elec. Microsc. Tech.

View full text Add to dashboard Cite

KEY WORDS Cross-section specimen, Cross-sectional transmission electron microscopy, Thin films, Titanium nitride, High speed steel ABSTRACT The preparation of cross-section samples of thin films for TEM, may be difficult and tedious, especially if the difference in chemical or physical etching rates is large between the film and the substrate. In this paper, a method is presented whereby cross-sections can be prepared even if the film and the substrate have a large difference in sputtering yield. By utilizing the strong angular dependence of the sputtering yield and sputter at a low ion incidence angle with respect to the substrate surface of 7-12" and, furthermore, by avoiding sputtering parallel to the interface, samples with homogeneous thickness can be obtained. The technique is demonstrated on reactively sputtered titanium nitride coatings on high speed steel substrates. The difference in sputtering yields is about three for this film-substrate combination with the substrate being sputtered fastest.

show abstract

Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films

Cited by 81 publications

References 21 publications

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

Cross‐Section preparation for tem of film‐substrate combinations with a large difference in sputtering yields

Contact Info

Product

Resources

About