2015
DOI: 10.1016/j.matlet.2015.01.130
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Effects of substrate temperature on the structural, morphological, electrical and optical properties of Al and Ga co-doped ZnO thin films grown by DC magnetron sputtering

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Cited by 45 publications
(18 citation statements)
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“…The observed increase in the local surface conductivity of the AZO films from 303 to 623 K is found to follow their bulk conductivity behaviour, where, bulk electrical resistivities ( ρ ) are found to decrease from 420 × 10 −4 Ω cm at T s = 303 K to 9.35 × 10 −4 Ω cm at T s = 623 K (Table ), mainly associated with an increase in Al dopants, Zn interstitials and oxygen vacancies leading to higher n e (Table ) . It should be noted that the thermally induced increase in kinetic energy of the Al dopants is higher at higher T s , thus substituting higher number of Al atoms in ZnO lattice, as evidenced with an increase in micro strain ( ε ) in these AZO films with increasing T s from −1.73 × 10 −3 at T s = 303 K to −1.88 × 10 −3 at T s = 623 K (Table ).…”
Section: Resultsmentioning
confidence: 82%
“…The observed increase in the local surface conductivity of the AZO films from 303 to 623 K is found to follow their bulk conductivity behaviour, where, bulk electrical resistivities ( ρ ) are found to decrease from 420 × 10 −4 Ω cm at T s = 303 K to 9.35 × 10 −4 Ω cm at T s = 623 K (Table ), mainly associated with an increase in Al dopants, Zn interstitials and oxygen vacancies leading to higher n e (Table ) . It should be noted that the thermally induced increase in kinetic energy of the Al dopants is higher at higher T s , thus substituting higher number of Al atoms in ZnO lattice, as evidenced with an increase in micro strain ( ε ) in these AZO films with increasing T s from −1.73 × 10 −3 at T s = 303 K to −1.88 × 10 −3 at T s = 623 K (Table ).…”
Section: Resultsmentioning
confidence: 82%
“…Thus, the composition of A3.0G1.0ZO was found to be optimal with respect to electrical properties, showing both the highest measured mobility and charge carrier density. Whilst the charge carrier density was lower than that reported elsewhere by up to four times, 38,39,43,44 this can in turn rationalize the exceptionally high carrier mobility (10 times higher than that reported by the best performing AGZO materials) [38][39][40][41][42][43][44] in part due to reduced scattering effects from other charge carriers.…”
Section: Electrical Characterizationmentioning
confidence: 87%
“…The co-doping approach has yielded films with resistivities in the literature of ca. 10 -4 Ω cm [38][39][40][41][42][43] and optical transparencies above 80 % [42][43][44] for thin films (deposited by magnetron sputtering). Whilst showing promise for TCO applications, AGZO has received relatively little attention in the literature compared to singularly doped AZO and GZO.…”
Section: Introductionmentioning
confidence: 99%
“…Co-doping of ZnO with Al 3+ and Ga 3+ ions has been also studied as way for increasing the dopant solubility and increasing the carrier mobility. In this sense, enhanced electronic and defect properties of ZnO were observed by co-doping of Al and Ga respect to the values obtained with the individual doping with of Al or Ga [13,14].…”
Section: Introductionmentioning
confidence: 84%