Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source

“…1(a) shows the 15 K PL spectrum of the 3 mm-thick InGaP epilayer grown under optimized conditions (T s ¼ 460 C, V/III=15), the PL peak energy is 1.998 eV, the PL FHWM is 5.26 meV. To our best knowledge, the PL peak energy is the largest compared with that of other InGaP epilayers grown by SSMBE with GDS and the FWHM value is the narrowest compared to that of InGaP epilayers grown by other methods [8,19]. An anomalous temperature dependence (Z-type dependence) in the PL spectrum was usually observed in ordered InGaP due to crystal defects associated with the existence of the ordered structure.…”

“…It is possible that the broaden of PL FWHM in more ordered sample results from emission from the spatial distribution that appears to tail into the band gap. This has the effect of broadening the FWHM of the PL spectrum via recombination through the band tail [19]. Fig.…”

Red lasers grown by all-solid-source molecular beam epitaxy

“…SS-MBE of AlGaInP does not suffer from alloy ordering to the same extent. According to recent studies, there exists only a weak ordering effect in SSMBE-grown GaInP epilayers with tilted substrates [18,19]. We have also made comparative experiments on growth of Ga 0.5 In 0.49 P and (Al x Ga 1−x ) 0.5 In 0.49 P on GaAs(100) substrates misoriented 10 • towards (111)A and on exactly cut GaAs(100)-0 • substrates.…”