We investigated the flux pinning properties in terms
of the critical
current density (J
c) and pinning force
density (F
p) of MgB2 films
with ZnO buffer layers of various thicknesses. At higher thicknesses
of the buffer layer, significantly larger J
c values are observed in the high-field region, whereas J
c values in the low- and intermediate-field regions remain
largely unaffected. A secondary point-pinning mechanism other than
primary grain boundary pinning is observed in the F
p analysis, which depends on the thickness of the ZnO
buffer layer. Moreover, a close relationship between the Mg and B
bond ordering and the fitting parameter of secondary pinning is obtained,
indicating that the local structural distortion of MgB2 induced by ZnO buffer layers with different thicknesses may contribute
to flux-pinning enhancement in the high-field region. Discovering
further advantages of ZnO as a buffer layer other than the delamination
resistance it provides will help to develop a MgB2 superconducting
cable with a high J
c for power applications.