1993
DOI: 10.1021/la00031a023
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Effects of surface hydration on the deposition of silane monolayers on silica

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Cited by 267 publications
(265 citation statements)
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“…They can also form on some compound semiconductors, such as InP and GaAs [13]. Although sensitive to moisture in the environment, organosilanes can form SAMs on hydroxylated silicon and silicon dioxide surfaces [14]. Fatty acid molecules will form a SAM on aluminum oxide [15], [16].…”
Section: A Self-assembled Monolayers (Sams) On Solid Substratesmentioning
confidence: 99%
“…They can also form on some compound semiconductors, such as InP and GaAs [13]. Although sensitive to moisture in the environment, organosilanes can form SAMs on hydroxylated silicon and silicon dioxide surfaces [14]. Fatty acid molecules will form a SAM on aluminum oxide [15], [16].…”
Section: A Self-assembled Monolayers (Sams) On Solid Substratesmentioning
confidence: 99%
“…Self-assembled films from alkyltrichlorosilanes have been widely studied 1-5 because they are interesting for both technological and scientific applications. Chlorosilanes are attractive because they can chemically react with various surfaces [6][7][8] and form closely packed, grafted hydrophobic films, which are used as precursor layers in the study of protein adsorption. 9 OTS is commonly used for the formation of a hydrophobic layer that has high physical and chemical stability on silicon, quartz, and glass surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Bulk water on the surface of the SiO 2 wafer was then blown away with nitrogen because free water may cause undesirable polymerization to ODTS. A thin film of water that remains on the surface is thought to enhance the quality of the C 18 coating (Flinn et al, 1994;Hair and Tripp, 1995;Le Grange and Markham, 1993). Recent studies on growth mechanisms of ODTS formation on silica substrates can be found in the literature (Liu et al, 2001;Peters et al, 2002;Richter et al, 2000).…”
Section: Preparation Of Microchip With C 18 Surfacementioning
confidence: 99%