Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method
Yu Zhang,
Xin Wen,
Nuofu Chen
et al.
Abstract:Silicon carbide (SiC) polycrystalline powder. As the raw material for SiC single-crystal growth through the physical vapor transport (PVT) method, its surface size and shape have a great influence on growth of crystal. The surface size and shape of the evaporation area filled with polycrystalline powder were investigated by numerical simulation in this study. Firstly, the temperature distribution and deposition rate distribution for the PVT system were calculated by global numerical simulation, and the optimal… Show more
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