Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters

Soerowirdjo, Busono; Ashburn, P.

doi:10.1016/0038-1101(83)90107-7

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1985

2018

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Cited by 39 publications

(2 citation statements)

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“…A recent trend has been to use heavily doped polysilicon deposited on top of deliberately grown oxides of tunneling thickness in lieu of the metallic conductor [6], [7]. This is a more practical approach in that it allows high-temperature processing after the formation of the CIS structure.…”

Section: Novel Nmos Transistors Wi O Depth Conductor/thin Insulator/ mentioning

confidence: 99%

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctions

Moravvej-Farshi

Green

1986

IEEE Electron Device Lett.

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Section: Novel Nmos Transistors Wi O Depth Conductor/thin Insulator/ mentioning

confidence: 99%

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctions

Moravvej-Farshi

Green

1986

IEEE Electron Device Lett.

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“…Silicon bipolar transistors with emitter contacts comprising a polysilicon-insulator tunnel junction are presently receiving considerable attention (1)(2)(3)(4)(5)(6)(7)(8). The actual emitter in these devices is formed in monocrystalline silicon by a variety of methods.…”

Section: Introductionmentioning

confidence: 99%

The emitter-injection efficiency and emitter effective surface-recombination velocity in polysilicon emitter transistors

Halen¹,

Camporese²,

Pulfrey³

1985

Can. J. Phys.

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Measurements of the emitter-injection efficiency and calculations of the emitter effective surface-recombination velocity are reported for polysilicon emitter transistors, i.e., bipolar transistors with a polysilicon–insulator tunnel-junction contact to the emitter. It is demonstrated that the emitter-injection efficiency increases significantly and the emitter effective surface-recombination velocity decreases by two orders of magnitude when a thin insulating layer is deliberately grown between the monocrystalline emitter surface and the polycrystalline contact.

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Homojunction Field-Effect and Bipolar Transistors

Požela

1993

Physics of High-Speed Transistors

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Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters

Cited by 39 publications

References 4 publications

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctions

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctions

The emitter-injection efficiency and emitter effective surface-recombination velocity in polysilicon emitter transistors

Homojunction Field-Effect and Bipolar Transistors

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