Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices

Ultrafine Nickel Sulfide-Based Bipolar Resistive Switching Device as Artificial Synapses for Neuromorphic Application

“…Nickel-based materials, particularly nickel oxides, have been widely investigated as a resistive switching material for high-density memory applications. − The resistive switching devices are considered as artificial synapses upon the application of low-power electrical stimuli . Reports have been published on boron nitride, cobalt phosphate, copper oxide, zinc oxide, tantalum oxide, and titanium dioxide nanotube-based devices for high-density memory and/or neuromorphic computing applications. − The nickel-based sulfide materials have wide applications in dye-sensitized solar cells, supercapacitors, rechargeable batteries, electrochemical sensors, oxygen evolution reactions, and photocatalysis. − However, the neuromorphic performance study of nickel sulfide-based materials is still unexplored. For this reason, we have considered nickel sulfide nanomaterials for neuromorphic computing applications by fabricating a metal–insulator–metal type of device.…”

Photoinduced modulation of refractive index in Langmuir-Blodgett films of azo-based H-shaped liquid crystal molecules

“…The morphological transformation of organic molecules promises several unique device applications viz. optical switches, molecular motors, waveguides in photonics etc [6,[10][11][12][13][14]. The mesophases of liquid crystal (LC) molecules can be influenced by the external parameters like temperature, pressure, electric and magnetic fields.…”

Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO2 Nanotubes

“…Designed with this approach, different morphologies of nanomaterials have been widely utilized for memory and synaptic devices. 14 Among them, one-dimensional (1D) nanomaterials are the best choice for obtaining good charge transport in the switching layer. Numerous 1D nanomaterials, such as TiO 2 nanorods, 15 ZnO nanowires, 16 NiO nanowires, 17 CuO x nanowires, 18 WO 3 nanowires, 19 etc., have already been utilized for the fabrication of memristor devices.…”

“…To achieve a high packing density and improved device performance, a suitable device configuration is needed with a versatile nanostructured active switching layer. Designed with this approach, different morphologies of nanomaterials have been widely utilized for memory and synaptic devices . Among them, one-dimensional (1D) nanomaterials are the best choice for obtaining good charge transport in the switching layer.…”