Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

Sel, Kıvanç; Akaoglu, Baris; Atilgan, Ismail; Katircioglu, B.

doi:10.1016/j.sse.2010.12.010

Cited by 13 publications

(3 citation statements)

References 21 publications

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“…The lower deposition temperature prevents the activation of dopants from the deposition, thereby resulting in an electrical insulator. The mechanisms of electrical conduction in a-SiC films are not trivial [ 106 , 107 , 108 , 109 ] and are not pursued in detail here in favor of focusing on the methods of controlling the resistivity during deposition. The conductivity of a-SiC is known to increase in a power relationship as the measurement’s AC frequency is increased for frequencies up to 1 MHz [ 96 , 109 ], resulting in resistivity decreases of up to 3 orders of magnitude from DC to 1 MHz.…”

Section: Controlling A-sic Film Properties For Pecvdmentioning

confidence: 99%

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Greenhorn,

Bano,

Stambouli

et al. 2024

Materials

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Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.

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Section: Controlling A-sic Film Properties For Pecvdmentioning

confidence: 99%

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Greenhorn,

Bano,

Stambouli

et al. 2024

Materials

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“…It was shown that in the case of amorphous SiC films, the hopping transport, and transport by extended states with multiple trapping should be taken into consideration. Moreover, it was concluded that for the films with high carbon content the hopping transport is dominant in the temperature range 293–450 K 9. Many theoretical approaches have been proposed to describe such transport, in particular its dispersive character 10–16.…”

Section: Introductionmentioning

confidence: 99%

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

Sielski

Jeszka

2012

Physica Status Solidi (a)

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The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge‐carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time‐of‐flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 × 105 V cm−1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of “high‐energy” charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport.

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“…Contrary to that LED's applications require bipolar carrier transport and efficient recombination rate of injected electron-hole pairs within the intrinsic layer of a-SiC x :H films. Each phenomena, transport and/or re-combination issues, limits the efficiency of LED's in which carriers might flow through either localized or extended states via hopping [11] in a-SiC x :H films. Within this context, since carrier injection issue and nature/amount of localized density of states (DOS) distribution are tightly bound with each other, d.c. and a.c. conductivities seem to be convenient techniques for characterizing electrical features of the a-SiC x :H film within a metal/insulator/semiconductor structure.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Transport in PECVD Grown a-SiC<sub>x</sub>:H Thin Film

Özdemi̇r

Bozkurt²,

Kutlu³

2011

MSA

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Dc/ac transport characteristic of PECVD grown hydrogenated amorphous silicon carbide (a-SiC x :H) thin film was investigated in MIS (metal/insulator/semiconductor) structure by dc current/voltage (I/V) at different temperature (T), ac admittance vs. temperature at constant gate bias voltages and deep level transient spectroscopy (DLTS), respectively. According to I-V-T analysis, two main regimes exhibited. At low electric field, apparent Ohm's law dominated with Arrhenius type thermal activation energy (E A) around 0.4 eV in both forward and reverse directions. At high field, on the contrary, space charge limited (SCL) current mechanism was eventual. The current transport mechanisms and its temperature/frequency dependence were interpreted by a thermally activated hopping processes across the localized states within a-SiC x :H thin film since 0.4 eV as E A was not high enough for intrinsic band conduction. Instead, transport of charge carriers took place in two steps; first a carrier is thermally excited to an empty energy level from an occupied state then multi-step tunnelling or hopping starts over. Therefore, the two steps mechanisms manifested as single activation energy, differing only through capture cross sections. In turn, two steps in capacitance together with conductance peaks in C-(G)-T while convoluted DLTS signal associated with such events in the measurements.

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Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

Cited by 13 publications

References 21 publications

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

Investigation of Electrical Transport in PECVD Grown a-SiC<sub>x</sub>:H Thin Film

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Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

Cited by 13 publications

References 21 publications

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

Investigation of Electrical Transport in PECVD Grown a-SiC&lt;sub&gt;x&lt;/sub&gt;:H Thin Film

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Investigation of Electrical Transport in PECVD Grown a-SiC<sub>x</sub>:H Thin Film