The temperature stability of the SiPM signal output can be a crucial aspect in many applications. In a typical scenario where the detector is biased at a constant voltage, a temperature fluctuation determines a change in the breakdown voltage and consequently in the applied over-voltage. The latter impacts on all the parameters that determine the output signal such as gain, PDE and correlated noise probability. In this paper we show a detailed analysis of the dependence of these parameters versus the temperature. In particular, we analyze two cases in which the quantity of interest is the integrated charge or the signal amplitude, respectively. The model is applied to a 1 × 1 mm 2 FBK RGB SiPM with 50 × 50 µm 2 cells showing a good agreement with the experimental data.