Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Abstract

This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si 3 N 4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is $22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si 3 N 4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si 3 N 4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si 3 N 4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si 3 N 4 system at certain operating conditions.

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

“…In electronic packaging system, copper in particular, a common metal with high bulk thermal and electrical conductivities, and apparently low electromigration rate [1], is an excellent material for interconnects in integrated circuitry on silicon dioxide substrates. The interface strength and reliability between Cu and SiO2 has been driving more and more attentions due to the brittle fracture often takes place at the Cu/SiO2 interface [2] which is one of most easily damage part in electronics products. As we know, the interface is a complicate domain, where two separate materials are bonded together by chemical bonds with various bonding characteristics and adhesion strength.…”

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

“…In electronic packaging system, copper in particular, a common metal with high bulk thermal and electrical conductivities, and apparently low electromigration rate [1], is an excellent material for interconnects in integrated circuitry on silicon dioxide substrates. The interface strength and reliability between Cu and SiO 2 has been driving more and more attentions due to the brittle fracture often takes place at the Cu/SiO 2 interface [2] which is one of most easily damage part in electronics products. As we know, the interface is a complicate domain, where two separate materials are bonded together by chemical bonds with various bonding characteristics and adhesion strength.…”