Effects of temperature coefficient of surface tension on oxygen transport in a small silicon Cz furnace

Oxygen-transport phenomena in a small silicon Czochralski furnace

“…1. These are exactly the same as those used in our previous papers [13][14][15][16]. In the following sections, the conventional-type furnace is named ''Type A'' and the furnace equipped with a gas guide is called ''Type B''.…”

“…Kalaev et al [12] conducted large-scale numerical simulation on the gas flow effect on heat transfer and melt convection in an industrial CZ silicon puller with a molybdenum heat shield. However, the effect of these substructures on gas-phase mass-transfer characteristics has not yet been analyzed, except for our global analysis [13][14][15][16]. A gas guide is expected to change the gas flow pattern near the melt/gas interface and to increase the gas-phase mass-transfer coefficient as well as the thermal effects, i.e., reduction of both the radiation heat loss and postheating of the grown crystal.…”

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

“…Inversely, the higher density of oxygen-related defects in Cz2 consumed a great quantity of vacancies during solidification in the temperature range 1273.15 K to 1373.15 K (1000°C to 1100°C). [12,32] As a result, fewer residual vacancies were available during copper decoration processes.…”

Transition from the Steady to the Oscillatory Thermocapillary Convection in a Rectangular Container Under Various Cold Wall Temperature Effects

“…Kuhlmann and Albensoeder (2008) have studied in detail the flow instabilities in thermocapillary-buoyant cavities of Pr = 10 for adiabatic top and bottom boundary conditions and for periodic boundary conditions in the span-wise direction. A set of global numerical simulations based on laminar, axisymmetric and pseudo steady model of a silicon Czochralski furnace was conducted to reveal the influence of the temperature coefficient of surface tension on flow pattern and oxygen transport by Li et al (2004). In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Czochralski furnace was carried out using the finite element method by Li et al (2006).…”