Effects of temperature in electrodeposition of ZnTe thin films

Hossain, Mohammed Ifteker; Kamruzzaman, M.; Islam, A. B. M. O.

doi:10.1007/s10854-014-2604-9

Cited by 12 publications

(3 citation statements)

References 25 publications

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“…Considering the merits and disadvantages of the electrodeposition technique, ZnTe films were grown on conductive oxide substrates for application in photoelectrochemical devices, 142 optimized for electronic devices 143 and evolved based on the electrodeposition temperature on FTO-coated glass substrates as the window layer in solar cell devices. 144 For their application as a hetero-partner in solar cells, films were prepared followed by chloride activation with the architecture of glass/FTO/n-CdS/p-ZnTe/Au. 145 Cu-doped and undoped ZnTe films were developed on metal substrates using this technique, where the obtained electrical properties were altered by the incorporation of a dopant.…”

Section: Deposition Techniquesmentioning

confidence: 99%

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

et al. 2022

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Section: Deposition Techniquesmentioning

confidence: 99%

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

et al. 2022

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“…As a result, over the last few years, group II-VI compound semiconductors (II = Zn, Cd, Hg and VI = S, Se, Te) have been extensively studied because of their excellent electrical, structural, optical properties, and broadly used in optoelectronic and photovoltaic devices [10][11][12]. Among II-VI materials, CdTe has been managed to gain signi cant interest in solar cell technology and so many reports are presented due to the potential for higher PCE (18-24%) and absorption coe cient, which demand thin layer of material utilization for their manufacturing [13].…”

Section: Introductionmentioning

confidence: 99%

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

Preprint

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Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coefficient, improved conversion efficiency, and consequently inexpensive production material requirements. The unsuitability of the solar cell structure and band alignment at the buffer/absorber and absorber/BSF interface as well as carrier recombination at the front and back metal contact prevents the probable result from being achieved. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In2Te3/Pt solar cell and to investigate the influence of the Indium telluride (In2Te3) back surface field (BSF) layer on the performance parameters of open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is consider as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In2Te3/Pt which is consider as with BSF. The thickness, carrier density and bulk defect density of every layer, defect density at BSF/absorber and buffer/absorber interface, working temperature, back surface recombination velocity (SRV) as well as shunt and series resistance has been studied using SCAPS-1D simulator. The PCE has been achieved 20.20% with VOC of 2.008 V, JSC of 10.99 mA/cm2 and FF of 91.92% for the proposed solar cell with In2Te3 BSF layer by using thicknesses of around 30 nm, 30 nm, 500 nm and 100 nm for ZnO, CdS, ZnTe, and In2Te3, respectively. The present study provides the guidelines for the realization of high efficiency and thin ZnTe based solar cell in cost effective way.

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“…Hence, zinc telluride crystals have a potential application in light emitting diodes and photovoltaic cells. It has been reported that the crystalline zinc telluride thin films were able to be synthesized using some crystal growing processes, such as vacuum evaporation [1,2], sputter deposition [3], CVD [4], and electrochemical growth from a non-aqueous solvent [5][6][7][8][9] and from an aqueous solution [10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The electrochemical growing technique from an aqueous solvent has an excellent cost-performance in comparison to the other processes and it enables us to coat a conventional wide panel with a practically applicable surface appearance.…”

Section: Introductionmentioning

confidence: 99%

Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid

Ohta

Ohgai

2021

Applied Sciences

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Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V versus Ag/AgCl, which was in a more noble region compared with the equilibrium potential of zinc. The average thickness of the zinc telluride thin films was approximately 3 μm, and the average growth rate was approximately 3 nm s−1. The as-deposited zinc telluride thin films had an amorphous phase with a black tint. By contrast, the zinc telluride thin films annealed at 683 K had a crystalline phase with a reddish-brown tint. The electrodeposited single-phase zinc telluride exhibited an optical absorption performance in a wavelength region that was shorter than 559 nm. At the annealing temperature of 683 K, the zinc telluride films exhibited an energy band gap of 2.3 eV, which was almost identical to that of single-crystal zinc telluride. The resistivity of the as-deposited amorphous-like zinc telluride thin films was approximately 2 × 105 Ω·m, whereas that of the samples annealed at 683 K was around 2 × 103 Ω·m, which was smaller than that of single-crystal zinc telluride. A three-dimensional nanostructure constructed with the zinc telluride nanowire array was also demonstrated using a template synthesis technique.

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Effects of temperature in electrodeposition of ZnTe thin films

Cited by 12 publications

References 25 publications

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid

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