2017
DOI: 10.1016/j.jallcom.2017.07.252
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Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics

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Cited by 17 publications
(5 citation statements)
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“…9,[36][37][38] Additionally, employing non-stoichiometric ratios in traditional solid-state methods effectively eliminates the second phase ZnO. [39][40][41] Zn 1.8 SiO 3.8 ceramics exhibit excellent microwave performance when sintered at 1 300 • C, with ε r = 6.6, Q×f = 147 000 GHz and τ f = −22 ppm/ • C. 42 On the other hand, the high sintering temperature and large temperature coefficient are the main barriers. The high sintering temperature can be lowered by adding sintering aids such as glass powders or low-melting-point oxides but at the expense of the quality factor.…”
Section: Introductionmentioning
confidence: 99%
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“…9,[36][37][38] Additionally, employing non-stoichiometric ratios in traditional solid-state methods effectively eliminates the second phase ZnO. [39][40][41] Zn 1.8 SiO 3.8 ceramics exhibit excellent microwave performance when sintered at 1 300 • C, with ε r = 6.6, Q×f = 147 000 GHz and τ f = −22 ppm/ • C. 42 On the other hand, the high sintering temperature and large temperature coefficient are the main barriers. The high sintering temperature can be lowered by adding sintering aids such as glass powders or low-melting-point oxides but at the expense of the quality factor.…”
Section: Introductionmentioning
confidence: 99%
“…Using the sol–gel method allows obtaining pure‐phase Zn 2 SiO 4 powder below 100 nm, with a high Q × f value of up to 198 400 GHz 9,36–38 . Additionally, employing non‐stoichiometric ratios in traditional solid‐state methods effectively eliminates the second phase ZnO 39–41 . Zn 1.8 SiO 3.8 ceramics exhibit excellent microwave performance when sintered at 1 300°C, with ε r = 6.6, Q × f = 147 000 GHz and τ f = −22 ppm/°C 42 …”
Section: Introductionmentioning
confidence: 99%
“…7,8 Bi 2 O 3 is a potential electrolyte material with a high ionic conductivity and low melting point of about 825 • C. 1 Thus, the Bi 2 O 3 can potentially lower the operation temperature due to the improved oxygen ionic conductivity and lower the sintering temperature by a liquid-phase-assisted sintering process. [9][10][11] In terms of this advantage, adding the Bi 2 O 3 into YSZ material is a possible method to break barriers of high sintering and operation temperature of YSZ in real application. Admittedly, the risk that the Bi 2 O 3 may be reduced to Bi by H 2 existing at the anode of SOFC.…”
Section: Introductionmentioning
confidence: 99%
“…Most of these ceramics require high sintering temperature, which can be a factor that hinders the integration of them into an electronic circuit [5]. Therefore, low temperature co-fired ceramics (LTCC) were developed by adding low quantities of melting temperature oxides, such as Bi 2 O 3 [6,7], B 2 O 3 [8] , TeO 2 [9][10][11] , V 2 O 5 [11] , among others [12][13][14], which allows the sintering process below 950 °C.…”
Section: Introductionmentioning
confidence: 99%